IRFH7923TRPBF International Rectifier, IRFH7923TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRFH7923TRPBF
• Description: MOSFET N-CH 30V 15A PQFN56
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH7923TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.7 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 13nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1095pF @ 15V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, 8-PowerQFN
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 15A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 6.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.8V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH7923TRPBFCT

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0.001
0.01
100
0.1
16
14
12
10
10
8
6
4
2
0
1E-006
1
Fig 9. Maximum Drain Current Vs.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
25
D = 0.50
Ambient Temperature
0.02
0.01
0.20
0.05
0.10
T J , Junction Temperature (°C)
50
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
75
0.0001
100
125
t 1 , Rectangular Pulse Duration (sec)
0.001
150
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci i Ri
0.01
R
Fig 10. Threshold Voltage Vs. Temperature
1
R
2.2
2.0
1.8
1.6
1.4
1.2
1.0
1
-75 -50 -25
τ
2
R
τ
2
2
R
2
0.1
R
τ
3
3
R
τ
3
3
T J , Temperature ( °C )
τ
R
4
τ
4
R
4
0
4
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
R
τ
5
5
25
R
τ
1
5
5
τ
a
50
Ri (°C/W) τi (sec)
9.52069
2.185739 0.000402
6.878609 0.013524
10.36243 0.33841
11.05530 4.926
I D = 25µA
75 100 125 150
10
63.0
5
100