STN4NF03L STMicroelectronics, STN4NF03L Datasheet

MOSFET N-CH 30V 6.5A SOT223

STN4NF03L

Manufacturer Part Number
STN4NF03L
Description
MOSFET N-CH 30V 6.5A SOT223
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STN4NF03L

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.5A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
9nC @ 10V
Input Capacitance (ciss) @ Vds
330pF @ 25V
Power - Max
3.3W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.05 Ohms
Forward Transconductance Gfs (max / Min)
6 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
6.5 A
Power Dissipation
3.3 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4525-2

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Features
Application
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “single feature size”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Table 1.
December 2007
STN4NF03L
Low threshold drive
Switching applications
Type
STN4NF03L
Order code
Device summary
V
30 V
DSS
<0.05 Ω
R
DS(on)
Marking
4NF03L
N-channel 30 V - 0.039 Ω - 6.5 A - SOT-223
6.5 A
I
D
Rev 6
Figure 1.
STripFET™ II Power MOSFET
Package
SOT-223
Internal schematic diagram
2
SOT-223
STN4NF03L
1
2
3
Packaging
Tape & reel
www.st.com
1/12
12

Related parts for STN4NF03L

STN4NF03L Summary of contents

Page 1

... Table 1. Device summary Order code STN4NF03L December 2007 N-channel 0.039 Ω SOT-223 STripFET™ II Power MOSFET R I DS(on) D <0.05 Ω 6.5 A Figure 1. Marking Package 4NF03L Rev 6 STN4NF03L SOT-223 Internal schematic diagram Packaging SOT-223 Tape & reel 1/12 www.st.com 12 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ STN4NF03L . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STN4NF03L 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Derating factor (2) E Single pulse avalanche energy AS T Operating junction temperature J T Storage temperature stg 1 ...

Page 4

... Parameter Test conditions 4.7 Ω (see Figure 15 4.7 Ω (see Figure 15) Min. Typ 250 µ 0.039 0.046 D Min. Typ 330 = 6.5 D 3.2 2 Min. Typ 4 100 = 4 STN4NF03L Max. Unit V 1 µA 10 µA 100 nA ± V Ω 0.05 Ω 0.06 Max. Unit Max. Unit ...

Page 5

... STN4NF03L Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) Forward on voltage Reverse recovery time rr Q Reverse recovery charge rr Reverse recovery current I RRM 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Parameter Test conditions ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 4. Output characteristics Figure 6. Transconductance 6/12 Figure 3. Thermal impedance junction-PCB Figure 5. Transfer characteristics Figure 7. Static drain-source on resistance STN4NF03L ...

Page 7

... STN4NF03L Figure 8. Gate charge vs. gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs. temperature Figure 12. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 11. Normalized on resistance vs. temperature 7/12 ...

Page 8

... Test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive waveform 8/12 Figure 14. Gate charge test circuit Figure 16. Unclamped inductive load test circuit Figure 18. Switching time waveform STN4NF03L ...

Page 9

... STN4NF03L 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 10

... STN4NF03L mils MIN. TYP. MAX. 89.4 90.6 91.7 179.9 181.1 182.3 7.9 15.7 23.6 24.8 25.6 26.4 59.1 63 66.9 12.6 114.2 118.1 122.1 26.4 27.6 28.7 263.8 275 ...

Page 11

... STN4NF03L 5 Revision history Table 8. Document revision history Date 21-Jun-2004 09-Oct-2006 27-Nov-2007 11-Dec-2007 Revision – Initial electronic version. 3 – Document status promoted from preliminary data to datasheet 4 Document reformatted no content change 5 Updated marking on Updated E value Revision history Changes Table 1: Device summary Table 2: Absolute maximum ratings ...

Page 12

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STN4NF03L ...

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