IPB100N06S3L-03 Infineon Technologies, IPB100N06S3L-03 Datasheet - Page 5

• Manufacturer Part Number: IPB100N06S3L-03
• Description: MOSFET N-CH 55V 100A TO263-3-2
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB100N06S3L-03

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.7 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.2V @ 230µA
• Gate Charge (qg) @ Vgs: 550nC @ 10V
• Input Capacitance (ciss) @ Vds: 26240pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.7 m Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 100 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 77 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 70 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPB100N06S3L-03INTR; IPB100N06S3L-03XTINTR; IPB100N06S3L-03XTINTR; IPB100N06S3L03XT; SP000087978

Rev. 1.1
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
400
300
200
100
200
150
100
50
0
0
DS
GS
0
1
); T
); V
10 V
GS
j
j
DS
= 25 °C
= 4V
6 V
2
2
V
V
DS
GS
4
3
5 V
4.5 V
4 V
3.5 V
3 V
[V]
[V]
-55 °C
6
4
25 °C
175 °C
page 5
8
5
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. drain-source on-state resistance
R
DS(on)
DS(on)
10
9
8
7
6
5
4
3
2
1
0
5
4
3
2
1
= f(I
= f(T
-60
0
IPI100N06S3L-03, IPP100N06S3L-03
D
j
); T
); I
GS
-20
20
D
j
= 25 °C
= 80 A; V
40
20
GS
T
I
D
j
60
60
= 10 V
[°C]
[A]
IPB100N06S3L-03
3.5 V
100
80
100
140
2007-11-07
4.5 V
4 V
5 V
6 V
10 V
120
180