IRFH5053TRPBF International Rectifier, IRFH5053TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRFH5053TRPBF
• Description: MOSFET N-CH 100V 9.3A PQFN56
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH5053TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 9.3A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 9.3A
• Vgs(th) (max) @ Id: 4.9V @ 100µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1510pF @ 50V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, 8-PowerQFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH5053TRPBFTR

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0.01
100
100
0.1
0.1
10
10
1
Fig 3. Typical Transfer Characteristics
1
Fig 1. Typical Output Characteristics
0.1
3
V DS , Drain-to-Source Voltage (V)
T J = 150°C
4.5V
V GS , Gate-to-Source Voltage (V)
1
4
10
≤ 60µs PULSE WIDTH
Tj = 25°C
V DS = 50V
≤60µs PULSE WIDTH
5
T J = 25°C
TOP
BOTTOM
100
6
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
1000
7
100
0.1
2.5
2.0
1.5
1.0
0.5
10
1
Fig 2. Typical Output Characteristics
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
Fig 4. Normalized On-Resistance
I D = 9.3A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
4.5V
T J , Junction Temperature (°C)
vs. Temperature
1
10
≤ 60µs PULSE WIDTH
Tj = 150°C
TOP
BOTTOM
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
1000
3