IRFH5053TRPBF International Rectifier, IRFH5053TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRFH5053TRPBF
• Description: MOSFET N-CH 100V 9.3A PQFN56
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH5053TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 9.3A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 9.3A
• Vgs(th) (max) @ Id: 4.9V @ 100µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1510pF @ 50V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, 8-PowerQFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH5053TRPBFTR

Fig 14a. Unclamped Inductive Test Circuit
Fig 14b. Unclamped Inductive Waveforms
6
50
40
30
20
10
I
Fig 12. On-Resistance vs. Gate Voltage
AS
4
R G
20V
V DS
V GS, Gate -to -Source Voltage (V)
6
t p
I AS
t p
D.U.T
8
0.01 Ω
L
T J = 25°C
10
T J = 125°C
V
(BR)DSS
12
15V
DRIVER
I D = 9.3A
14
+
-
V DD
A
16
90%
V
10%
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
V
DS
90
80
70
60
50
40
30
20
10
GS
0
25
Fig 13. Maximum Avalanche Energy
t
d(on)
Starting T J , Junction Temperature (°C)
≤ 0.1
50
≤ 1
t
r
vs. Drain Current
75
t
d(off)
100
TOP
BOTTOM 7.4A
www.irf.com
t
f
+
-
125
I D
1.5A
1.9A
150