IRFH5053TRPBF International Rectifier, IRFH5053TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRFH5053TRPBF
• Description: MOSFET N-CH 100V 9.3A PQFN56
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH5053TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 9.3A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 9.3A
• Vgs(th) (max) @ Id: 4.9V @ 100µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1510pF @ 50V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, 8-PowerQFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH5053TRPBFTR

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0.01
100
0.1
10
1
1E-006
10
8
6
4
2
0
Fig 9. Maximum Drain Current vs.
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
D = 0.50
0.05
0.02
0.10
0.20
0.01
Ambient Temperature
1E-005
T A , Ambient Temperature (°C)
50
SINGLE PULSE
( THERMAL RESPONSE )
75
0.0001
100
0.001
125
t 1 , Rectangular Pulse Duration (sec)
150
0.01
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci= τi/Ri
R
Fig 10. Threshold Voltage vs. Temperature
1
R
1
4.5
4.0
3.5
3.0
2.5
2.0
0.1
τ
-75 -50 -25
2
R
τ
2
2
R
2
R
τ
3
3
R
τ
1
3
3
T J , Temperature ( °C )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
I D = 100µA
τ
R
4
0
τ
4
R
4
4
τ
A
25
τ
10
A
Ri (°C/W) τi (sec)
1.3862
3.6808
18.148
16.804
50
75 100 125 150
100
0.000201
0.013839
0.993400
37.6
1000
5