IRFH5053TRPBF International Rectifier, IRFH5053TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRFH5053TRPBF
• Description: MOSFET N-CH 100V 9.3A PQFN56
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH5053TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 9.3A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 9.3A
• Vgs(th) (max) @ Id: 4.9V @ 100µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1510pF @ 50V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, 8-PowerQFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH5053TRPBFTR

100000
10000
4
1000
100
100
0.1
10
10
1
Fig 5. Typical Capacitance vs.
Fig 7. Typical Source-Drain Diode
0.2
1
C oss
C rss
Drain-to-Source Voltage
T J = 150°C
V DS , Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
0.4
Forward Voltage
C iss
0.6
f = 1 MHZ
10
T J = 25°C
0.8
V GS = 0V
1.0
100
1.2
1000
14.0
12.0
10.0
100
8.0
6.0
4.0
2.0
0.0
0.1
10
1
Fig 8. Maximum Safe Operating Area
0.01
0
Fig 6. Typical Gate Charge vs.
I D = 7.4A
T A = 25°C
Tj = 150°C
Single Pulse
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
5
0.1
DC
Q G , Total Gate Charge (nC)
10msec
10
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V DS = 80V
V DS = 50V
1
1msec
15
10
100µsec
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20
100
25
1000
30