IPP100N06S3L-04 Infineon Technologies, IPP100N06S3L-04 Datasheet - Page 7

• Manufacturer Part Number: IPP100N06S3L-04
• Description: MOSFET N-CH 55V 100A TO-220
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP100N06S3L-04

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.8 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.2V @ 150µA
• Gate Charge (qg) @ Vgs: 362nC @ 10V
• Input Capacitance (ciss) @ Vds: 17270pF @ 25V
• Power - Max: 214W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPP100N06S3L-04; IPP100N06S3L-04IN; IPP100N06S3L04X; IPP100N06S3L04XK; SP000102209

Rev. 1.1
13 Typical avalanche energy
E
parameter: I
15 Typ. gate charge
V
parameter: V
AS
GS
2500
2000
1500
1000
= f(T
= f(Q
500
12
10
8
6
4
2
0
0
0
0
j
)
gate
25 A
100 A
50 A
D
); I
DD
50
D
= 80 A pulsed
50
100
Q
150
T
gate
100
j
[°C]
[nC]
200
11 V
250
150
300
44 V
350
200
page 7
14 Drain-source breakdown voltage
V
16 Gate charge waveforms
BR(DSS)
V
V
66
64
62
60
58
56
54
52
50
48
46
GS
GS
-60
= f(T
IPI100N06S3L-04, IPP100N06S3L-04
Q
Q
gs
gs
j
); I
-20
D
= 1 mA
Q
Q
20
g
g
T
Q
Q
j
gd
gd
60
[°C]
IPB100N06S3L-04
100
Q
Q
gate
gate
140
2007-11-07
180