IPP050N06N G Infineon Technologies, IPP050N06N G Datasheet

MOSFET N-CH 60V 100A TO-220

IPP050N06N G

Manufacturer Part Number
IPP050N06N G
Description
MOSFET N-CH 60V 100A TO-220
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPP050N06N G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 mOhm @ 100A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 270µA
Gate Charge (qg) @ Vgs
167nC @ 10V
Input Capacitance (ciss) @ Vds
6100pF @ 30V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.005 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Fall Time
30 ns
Minimum Operating Temperature
- 55 C
Rise Time
31 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPP050N06N G
IPP050N06NGIN
IPP050N06NGX
IPP050N06NGXK
SP000204169
Features
Maximum ratings,
Parameter
Type
Package
Marking
Power-Transistor
v t
T
Symbol Conditions
I
I
E
V
P
T T
v t
T
T
T
I
I
T
T
i t
R
V
Product Summary
V
R
I
IPP050N06N G
Value
IPB050N06N G
Unit

Related parts for IPP050N06N G

IPP050N06N G Summary of contents

Page 1

... Power-Transistor Features Type Package Marking Maximum ratings, T Parameter v t IPP050N06N G Product Summary Symbol Conditions IPB050N06N G Value Unit ...

Page 2

... Parameter Thermal characteristics Electrical characteristics, T Static characteristics IPP050N06N G Symbol Conditions IPB050N06N G Values Unit min. typ. max. ...

Page 3

... Parameter Dynamic characteristics Reverse Diode IPP050N06N G Symbol Conditions IPB050N06N G Values Unit min. typ. max. ...

Page 4

... Power dissipation 350 300 250 200 150 100 100 T [° Safe operating area [ Drain current 120 100 150 200 0 4 Max. transient thermal impedance IPP050N06N G IPB050N06N G 50 100 150 T [° [s] p 200 0 10 ...

Page 5

... Typ. output characteristics 280 240 200 160 120 [ Typ. transfer characteristics 240 220 200 180 160 140 120 100 [ Typ. drain-source on resistance Typ. forward transconductance 240 200 160 120 IPP050N06N G IPB050N06N 120 160 I [ 120 160 I [A] D 200 200 ...

Page 6

... Drain-source on-state resistance -60 - [° Typ. capacitances [ Typ. gate threshold voltage 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 100 140 180 -60 12 Forward characteristics of reverse diode IPP050N06N G IPB050N06N - 100 140 T [°C] j 0 [V] SD 180 2.5 ...

Page 7

... Avalanche characteristics [µ Drain-source breakdown voltage -60 - [° Typ. gate charge Gate charge waveforms 100 140 180 IPP050N06N G IPB050N06N 120 Q [nC] gate 160 g ate ...

Page 8

... PG-TO-263-3 (D²-Pak) IPP050N06N G IPB050N06N G ...

Page 9

... PG-TO220-3: Outline IPP050N06N G IPB050N06N G ...

Page 10

... IPP050N06N G IPB050N06N G ...

Related keywords