IPP050N06N G Infineon Technologies, IPP050N06N G Datasheet - Page 10

• Manufacturer Part Number: IPP050N06N G
• Description: MOSFET N-CH 60V 100A TO-220
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP050N06N G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 270µA
• Gate Charge (qg) @ Vgs: 167nC @ 10V
• Input Capacitance (ciss) @ Vds: 6100pF @ 30V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.005 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 30 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 31 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPP050N06N G; IPP050N06NGIN; IPP050N06NGX; IPP050N06NGXK; SP000204169

IPP050N06N G
IPB050N06N G