IRFH5210TR2PBF International Rectifier, IRFH5210TR2PBF Datasheet - Page 2

• Manufacturer Part Number: IRFH5210TR2PBF
• Description: MOSFET N-CH 100V 55A 5X6 PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFH5210TR2PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14.9 mOhm @ 33A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 2570pF @ 25V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVQFN
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 55 A
• Power Dissipation: 104 W
• Gate Charge Qg: 39 nC
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH5210TR2PBFTR

∆ΒV
∆V
Static @ T
BV
R
V
I
I
gfs
Q
Q
Q
R
t
t
t
t
C
C
C
Avalanche Characteristics
E
I
Diode Characteristics
I
I
V
t
Q
t
Thermal Resistance
R
R
R
R
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
on
GS(th)
AS
SD
DS(on)
G
iss
oss
rss
g
Q
Q
Q
Q
sw
oss
rr
θJC
θJC
θJA
θJA
2
GS(th)
DSS
gs1
gs2
gd
godr
DSS
(Bottom)
(Top)
(<10s)
/∆T
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 25°C (unless otherwise specified)
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Ù
h
Parameter
Parameter
gs2
™
+ Q
gd
)
g
g
Parameter
Time is dominated by parasitic Inductance
Min.
Min.
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
66
2570
Typ.
Typ.
0.10
12.6
16.5
-9.3
–––
–––
–––
–––
–––
–––
–––
260
100
–––
–––
–––
165
6.9
2.6
9.5
1.8
7.2
9.7
6.5
39
13
11
21
29
Max. Units
Max. Units
Typ.
14.9
-100
–––
–––
––– mV/°C
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
220
250
4.0
1.3
20
59
55
44
V/°C
mΩ
µA
nA
nC
nC
nC
pF
ns
ns
V
V
S
Ω
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
See Fig.17 & 18
V
V
I
R
See Fig.15
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 500A/µs
Typ.
–––
–––
–––
–––
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
GS
DS
G
= 33A
= 33A
=1.65Ω
= 25°C, I
= 25°C, I
= V
= 100V, V
= 100V, V
= 50V, I
= 50V
= 16V, V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 50V, V
= 0V
GS
Max.
86
33
, I
D
S
F
D
D
D
= 250µA
Conditions
Conditions
GS
GS
= 33A, V
= 33A, V
= 100µA
= 33A
= 33A
GS
GS
Max.
= 0V
= 10V
eÃ
1.2
15
35
22
= 0V
= 0V, T
D
e
GS
DD
= 1mA
www.irf.com
J
= 0V
= 50V
G
= 125°C
Units
mJ
A
Units
°C/W
e
D
S