IRFH5210TR2PBF International Rectifier, IRFH5210TR2PBF Datasheet - Page 6

• Manufacturer Part Number: IRFH5210TR2PBF
• Description: MOSFET N-CH 100V 55A 5X6 PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFH5210TR2PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14.9 mOhm @ 33A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 2570pF @ 25V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVQFN
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 55 A
• Power Dissipation: 104 W
• Gate Charge Qg: 39 nC
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH5210TR2PBFTR

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6
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Fig 17. Gate Charge Test Circuit
D.U.T
1K
ƒ
+
-
•
•
•
•
Fig 16.
SD
S
•
•
•
DUT
-
L
„
G
+
HEXFET
VCC
+
-
®
Re-Applied
Voltage
Power MOSFETs
Reverse
Recovery
Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
Waveform
Waveform
Vgs(th)
Qgs1 Qgs2
Vds
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
for N-Channel
Fig 18. Gate Charge Waveform
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
Qgd
D =
Period
P.W.
Qgodr
V
V
I
SD
GS
DD
=10V
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Vgs
Id