IRFH5210TR2PBF International Rectifier, IRFH5210TR2PBF Datasheet - Page 5

• Manufacturer Part Number: IRFH5210TR2PBF
• Description: MOSFET N-CH 100V 55A 5X6 PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFH5210TR2PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14.9 mOhm @ 33A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 2570pF @ 25V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVQFN
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 55 A
• Power Dissipation: 104 W
• Gate Charge Qg: 39 nC
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH5210TR2PBFTR

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Fig 14a. Unclamped Inductive Test Circuit
Fig 12. On-Resistance vs. Gate Voltage
35
30
25
20
15
10
Fig 15a. Switching Time Test Circuit
5
2
R G
20V
V DS
4
V GS, Gate -to -Source Voltage (V)
t p
6
≤ 0.1
≤ 1
I AS
D.U.T
8
0.01 Ω
L
10
12
T J = 25°C
T J = 125°C
15V
14
DRIVER
16
I D = 33A
+
-
+
-
V DD
18
A
20
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 14b. Unclamped Inductive Waveforms
400
300
200
100
90%
V
10%
V
0
I
DS
AS
GS
25
Fig 15b. Switching Time Waveforms
Starting T J , Junction Temperature (°C)
t
d(on)
50
t
t p
r
75
t
100
d(off)
V
(BR)DSS
TOP
BOTTOM 33A
t
f
125
I D
3.4A
8.6A
150
5