IRFH5210TR2PBF International Rectifier, IRFH5210TR2PBF Datasheet - Page 3

• Manufacturer Part Number: IRFH5210TR2PBF
• Description: MOSFET N-CH 100V 55A 5X6 PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFH5210TR2PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14.9 mOhm @ 33A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 2570pF @ 25V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVQFN
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 55 A
• Power Dissipation: 104 W
• Gate Charge Qg: 39 nC
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH5210TR2PBFTR

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Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
100000
10000
1000
1000
0.01
100
1000
100
0.1
1.0
10
Fig 3. Typical Transfer Characteristics
100
10
Fig 1. Typical Output Characteristics
10
1
0.1
2
1
C rss
3.8V
T J = 150°C
C oss
C iss
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
3
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
1
4
V DS = 50V
≤60µs PULSE WIDTH
T J = 25°C
10
≤ 60µs PULSE WIDTH
Tj = 25°C
f = 1 MHZ
5
10
6
TOP
BOTTOM
100
7
VGS
15V
10V
7.0V
5.0V
4.5V
4.3V
4.0V
3.8V
1000
100
8
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
100
14.0
12.0
10.0
10
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
8.0
6.0
4.0
2.0
0.0
1
Fig 2. Typical Output Characteristics
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
0
I D = 33A
V GS = 10V
I D = 33A
V DS , Drain-to-Source Voltage (V)
3.8V
T J , Junction Temperature (°C)
10
Q G , Total Gate Charge (nC)
1
20
V DS = 80V
V DS = 50V
VDS= 20V
≤ 60µs PULSE WIDTH
Tj = 150°C
10
30
TOP
BOTTOM
100
40
VGS
15V
10V
7.0V
5.0V
4.5V
4.3V
4.0V
3.8V
1000
50
3