IRFH5210TR2PBF International Rectifier, IRFH5210TR2PBF Datasheet - Page 4

• Manufacturer Part Number: IRFH5210TR2PBF
• Description: MOSFET N-CH 100V 55A 5X6 PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFH5210TR2PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14.9 mOhm @ 33A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 2570pF @ 25V
• Power - Max: 3.6W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVQFN
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 55 A
• Power Dissipation: 104 W
• Gate Charge Qg: 39 nC
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH5210TR2PBFTR

Fig 7. Typical Source-Drain Diode Forward Voltage
4
1000
100
0.1
60
50
40
30
20
10
10
0.001
0
1
0.01
Fig 9. Maximum Drain Current vs.
0.1
0.2
25
10
1
1E-006
Case (Bottom) Temperature
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
T J = 150°C
V SD , Source-to-Drain Voltage (V)
D = 0.50
0.4
50
T C , Case Temperature (°C)
0.01
0.10
0.02
0.05
0.20
SINGLE PULSE
( THERMAL RESPONSE )
0.6
75
1E-005
100
T J = 25°C
0.8
V GS = 0V
125
1.0
t 1 , Rectangular Pulse Duration (sec)
150
0.0001
1.2
Fig 10. Threshold Voltage vs. Temperature
1000
100
4.5
4.0
3.5
3.0
2.5
2.0
1.5
10
Fig 8. Maximum Safe Operating Area
0.001
1
-75 -50 -25
0
Tc = 25°C
Tj = 150°C
Single Pulse
I D = 100µA
I D = 250µA
I D = 1.0mA
I D = 1.0A
V DS , Drain-to-Source Voltage (V)
10msec
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1
T J , Temperature ( °C )
DC
OPERATION IN THIS AREA
LIMITED BY R DS (on)
0
1msec
0.01
25
10
100µsec
50
75 100 125 150
100
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0.1
1000