STP5NK50Z STMicroelectronics, STP5NK50Z Datasheet - Page 5

• Manufacturer Part Number: STP5NK50Z
• Description: MOSFET N-CH 500V 4.4A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP5NK50Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 4.4A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 535pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.5 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 3.1 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 70000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3195-5

Figure 9: Transconductance
Figure 10: Gate Charge vs Gate-source Voltage
Figure 11: Normalized Gate Threshold Voltage
vs Temperature
STB5NK50Z/-1 - STD5NK50Z/-1 - STP5NK50Z - STP5NK50ZFP
Figure 12: Static Drain-Source On Resistance
Figure 13: Capacitance Variations
Figure 14: Normalized On Resistance vs Tem-
perature
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