STF10NK50Z STMicroelectronics, STF10NK50Z Datasheet

MOSFET N-CH 500V 9A TO220FP

STF10NK50Z

Manufacturer Part Number
STF10NK50Z
Description
MOSFET N-CH 500V 9A TO220FP
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STF10NK50Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
700 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
39.2nC @ 10V
Input Capacitance (ciss) @ Vds
1219pF @ 25V
Power - Max
30W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.55 Ohms
Forward Transconductance Gfs (max / Min)
7 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
9 A
Power Dissipation
30 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
4.5A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
550mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4654-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STF10NK50Z
Manufacturer:
ST
Quantity:
15 000
Part Number:
STF10NK50Z
Manufacturer:
ST
Quantity:
12 500
Part Number:
STF10NK50Z
Manufacturer:
ST
Quantity:
4 000
Part Number:
STF10NK50Z������
Manufacturer:
ST
0
Table 1: General Features
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding applications. Such series
complements ST full range of high voltage MOS-
FETs including revolutionary MDmesh™ products.
APPLICATIONS
Table 2: Order Codes
September 2005
STP10NK50Z
STF10NK50Z
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
LIGHTING
TYPE
SALES TYPE
STP10NK50Z
STF10NK50Z
DS
500 V
500 V
V
(on) = 0.55
DSS
N-CHANNEL 500V - 0.55 - 9A TO-220 / TO-220FP
R
< 0.7
< 0.7
DS(on)
P10NK50Z
F10NK50Z
MARKING
9 A(*)
9 A
I
D
Zener-Protected SuperMESH™MOSFET
125 W
30 W
Pw
Figure 1: Package
Figure 2: Internal Schematic Diagram
PACKAGE
TO-220FP
TO-220
TO-220
STP10NK50Z
STF10NK50Z
PACKAGING
TUBE
TUBE
Rev. 2
TO-220FP
1
2
3
1/12

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STF10NK50Z Summary of contents

Page 1

... IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC LIGHTING Table 2: Order Codes SALES TYPE STP10NK50Z STF10NK50Z September 2005 Zener-Protected SuperMESH™MOSFET Figure 1: Package 125 W 9 A(*) 30 W Figure 2: Internal Schematic Diagram MARKING PACKAGE P10NK50Z TO-220 F10NK50Z TO-220FP STP10NK50Z STF10NK50Z TO-220 TO-220FP PACKAGING TUBE TUBE Rev 1/12 ...

Page 2

... STP10NK50Z - STF10NK50Z Table 3: Absolute Maximum ratings Symbol V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Drain Current (continuous Drain Current (pulsed Total Dissipation at T TOT Derating Factor V Gate source ESD(HBM-C=100pF, R=1.5K ESD(G-S) dv/dt (1) Peak Diode Recovery voltage slope ...

Page 3

... (see Figure 22) Test Conditions di/dt = 100 A/µ 25° (see Figure 20 di/dt = 100 A/µ 150° (see Figure 20) STP10NK50Z - STF10NK50Z Min. Typ. Max. 500 = 125 °C ±10 3 3.75 0.55 Min. Typ. Max 1219 GS 159 40 806 39.2 7.42 20.7 Min. Typ. Max. 268 1 ...

Page 4

... STP10NK50Z - STF10NK50Z Figure 3: Safe Operating Area For TO-220 Figure 4: Safe Operating Area For TO-220FP Figure 5: Output Characteristics 4/12 Figure 6: Thermal Impedance For TO-220 Figure 7: Thermal Impedance For TO-220FP Figure 8: Transfer Characteristics ...

Page 5

... Figure 9: Transconductance Figure 10: Gate Charge vs Gate-source Voltage Figure 11: Normalized Gate Threshold Voltage vs Temperature STP10NK50Z - STF10NK50Z Figure 12: Static Drain-source On Resistance Figure 13: Capacitance Variations Figure 14: Normalized On Resistance vs Tem- perature 5/12 ...

Page 6

... STP10NK50Z - STF10NK50Z Figure 15: Source-Drain Forward Characteris- tics Figure 16: Maximum Avalanche Energy vs Temperature 6/12 Figure 17: Normalized BVdss vs Temperature ...

Page 7

... Figure 18: Unclamped Inductive Load Test Cir- cuit Figure 19: Switching Times Test Circuit For Resistive Load Figure 20: Test Circuit For Inductive Load Switching and Diode Recovery Times STP10NK50Z - STF10NK50Z Figure 21: Unclamped Inductive Wafeform Figure 22: Gate Charge Test Circuit Unclamped Inductive Load Test Circuit 7/12 ...

Page 8

... STP10NK50Z - STF10NK50Z In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK trademark ...

Page 9

... TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 16.40 28.90 3.85 2.95 STP10NK50Z - STF10NK50Z inch MIN. TYP. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.147 0.104 MAX ...

Page 10

... STP10NK50Z - STF10NK50Z DIM. MIN. A 4.4 B 2.5 D 2.5 E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9.8 L5 2 Ø 3 10/12 TO-220FP MECHANICAL DATA mm. TYP MAX. MIN. 4.6 0.173 2.7 0.098 2.75 0.098 0.7 0.017 1 0.030 1.7 0.045 1.7 0.045 5.2 0.195 2.7 ...

Page 11

... Table 10: Revision History Date Revision 01-Jul-2005 1 08-Sep-2005 2 Description of Changes First Release. Inserted Ecopak indication STP10NK50Z - STF10NK50Z 11/12 ...

Page 12

... STP10NK50Z - STF10NK50Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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