IPB06N03LA Infineon Technologies, IPB06N03LA Datasheet - Page 7

• Manufacturer Part Number: IPB06N03LA
• Description: MOSFET N-CH 25V 50A D2PAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB06N03LA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.9 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2V @ 40µA
• Gate Charge (qg) @ Vgs: 22nC @ 5V
• Input Capacitance (ciss) @ Vds: 2653pF @ 15V
• Power - Max: 83W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IPB06N03LAINTR; SP000016269

Rev. 1.3
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
10
29
28
27
26
25
24
23
22
21
20
AV
1
=f(T
-60
); R
1
j
GS
j(start)
); I
=25 :
-20
D
=1 mA
150 °C
10
20
t
T
AV
j
60
[°C]
[µs]
100 °C
100
100
140
25 °C
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g (th)
g s(th)
GS
0
gate
); I
DD
Q
D
=25 A pulsed
g s
10
IPI06N03LA, IPP06N03LA
Q
Q
gate
g
Q
20
sw
[nC]
Q
5 V
g d
IPB06N03LA
30
15 V
20 V
2003-12-18
Q
gate
40