STB40NF10T4 STMicroelectronics, STB40NF10T4 Datasheet

MOSFET N-CH 100V 50A D2PAK

STB40NF10T4

Manufacturer Part Number
STB40NF10T4
Description
MOSFET N-CH 100V 50A D2PAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STB40NF10T4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
28 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
80nC @ 10V
Input Capacitance (ciss) @ Vds
1780pF @ 25V
Power - Max
150W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
40A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
28mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.7V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.024 Ohms
Forward Transconductance Gfs (max / Min)
20 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
150 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6552-2
STB40NF10T4

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB40NF10T4
Manufacturer:
ST MICROELECTRONICS
Quantity:
30 000
Order codes
General features
Description
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Applications
June 2006
STB40NF10
Exceptional dv/dt capability
Low gate charge at 100°C
100% avalanche tested
Application oriented characterization
Switching application
Type
STB40NF10T4
Part number
V
100V
DSS
Low gate charge STripFET™ II Power MOSFET
<0.028Ω
R
DS(on)
B40NF10
Marking
N-channel 100V - 0.025Ω - 50A - D
50A
I
D
Rev 12
Internal schematic diagram
Package
D
2
PAK
D
2
PAK
STB40NF10
1
3
Tape & reel
Packaging
www.st.com
2
PAK
1/13
13

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STB40NF10T4 Summary of contents

Page 1

... Applications ■ Switching application Order codes Part number STB40NF10T4 June 2006 N-channel 100V - 0.025Ω - 50A - D Low gate charge STripFET™ II Power MOSFET R I DS(on) D <0.028Ω ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STB40NF10 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate- source voltage GS (1) I Drain current (continuous Drain current (continuous ...

Page 4

Electrical characteristics 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 3. On/off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate threshold voltage GS(th) ...

Page 5

STB40NF10 Table 5. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Transconductance 6/13 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance STB40NF10 ...

Page 7

STB40NF10 Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized breakdown voltage ...

Page 8

Test circuit 3 Test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive waveform 8/13 Figure 14. Gate charge test circuit Figure 16. ...

Page 9

STB40NF10 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on ...

Page 10

Package mechanical data DIM 10/ PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. MIN. TYP MAX. 4.4 4.6 2.49 2.69 0.03 ...

Page 11

STB40NF10 5 Packing mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 5.0 P0 3.9 4.1 ...

Page 12

Revision history 6 Revision history Table 6. Revision history Date 21-Jun-2004 15-Dec-2004 26-Jun-2006 12/13 Revision 10 Preliminary version 11 Complete version 12 New template, no content change STB40NF10 Changes ...

Page 13

... STB40NF10 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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