IPP120N04S3-02 Infineon Technologies, IPP120N04S3-02 Datasheet
IPP120N04S3-02
Specifications of IPP120N04S3-02
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IPP120N04S3-02 Summary of contents
Page 1
... Parameter 1) Continuous drain current 2) Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev. 1.0 IPI120N04S3-02, IPP120N04S3-02 Product Summary DS(on),max I D PG-TO263-3-2 Marking 3PN0402 3PN0402 3PN0402 ...
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... (BR)DSS =230 µA GS(th = DSS T =25 ° = =125 ° = GSS = =80 A DS( SMD version page 2 IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 Values min. typ. max 0 2.1 3.0 4 100 = 100 - 1.65 2.3 - 1.35 Unit K µA nA mΩ 2 2007-04-30 ...
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... =25 ° S,pulse = =25 ° = /dt =100 A/µ 0.5 K/W the chip is able to carry 306 A at 25°C. For detailed thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 Values min. typ. max. - 11000 14300 pF = 3000 3900 - 470 - = 160 - 0.83 ...
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... V DS Rev. 1.0 2 Drain current 140 120 100 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µs 10 µs 100 µ 100 [V] page 4 IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2007-04-30 ...
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... V GS Rev. 1.0 6 Typ. drain-source on-state resistance R = f(I DS(on) parameter 6 5 [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 3 2 °C -55 °C 0 [V] page 5 IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3- °C; SMD 5 100 200 300 I [ SMD -60 - 100 T [° 400 500 140 180 2007-04-30 ...
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... V SD Rev. 1.0 10 Typ. capacitances C = f(V 2300 µ 100 140 180 12 Typ. avalanche characteristics parameter: T 1000 100 10 0.8 1 1.2 1.4 [V] page 6 IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3- MHz [ j(start) 100°C 150° 100 t [µs] AV Ciss Coss Crss 25 30 25°C 1000 2007-04-30 ...
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... A 3000 2000 80 A 1000 [° Typ. gate charge pulsed GS gate D parameter 100 Q gate Rev. 1.0 14 Typ. drain-source breakdown voltage V BR(DSS 125 175 16 Gate charge waveforms s(th (th) 150 200 [nC] page 7 IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3- -60 - 100 T [° 140 180 Q gate 2007-04-30 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 IPI120N04S3-02, IPP120N04S3-02 page 8 IPB120N04S3-02 2007-04-30 ...
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... Revision History Version Rev. 1.0 IPI120N04S3-02, IPP120N04S3-02 Date page 9 IPB120N04S3-02 Changes 2007-04-30 ...