IPP120N04S3-02 Infineon Technologies, IPP120N04S3-02 Datasheet - Page 5

• Manufacturer Part Number: IPP120N04S3-02
• Description: MOSFET N-CH 40V 120A TO220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP120N04S3-02

• Package / Case: TO-220-3 (Straight Leads)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.3 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 230µA
• Gate Charge (qg) @ Vgs: 210nC @ 10V
• Input Capacitance (ciss) @ Vds: 14300pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0023 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000261228

Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
500
400
300
200
100
400
350
300
250
200
150
100
50
0
0
DS
GS
0
2
); T
); V
10 V
GS
j
j
DS
= 25 °C; SMD
7 V
1
= 6V
3
2
175 °C
4
V
V
GS
DS
3
25 °C
[V]
[V]
5
-55 °C
4
6.5 V
6 V
5.5 V
5 V
6
5
page 5
7
6
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. drain-source on-state resistance
R
DS(on)
DS(on)
8
7
6
5
4
3
2
1
0
2.5
1.5
0.5
= f(I
= f(T
3
2
1
0
-60
D
j
); T
); I
GS
IPI120N04S3-02, IPP120N04S3-02
100
-20
D
j
5 V
= 25 °C; SMD
= 80 A; V
20
200
I
GS
T
5.5 V
D
j
60
[A]
= 10 V; SMD
[°C]
300
IPB120N04S3-02
100
6 V
400
140
2007-04-30
10 V
7 V
500
180