IRFIB6N60A Vishay, IRFIB6N60A Datasheet - Page 2

• Manufacturer Part Number: IRFIB6N60A
• Description: MOSFET N-CH 600V 5.5A TO220FP
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of IRFIB6N60A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 3.3A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.75 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5.5 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFIB6N60A

Static @ T
Avalanche Characteristics
Thermal Resistance
Dynamic @ T
Diode Characteristics
R
R
E
I
E
I
V
R
V
I
I
I
V
t
Q
t
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
DSS
AR
SM
GSS
S
rr
on
2
d(on)
r
d(off)
f
AS
AR
(BR)DSS
GS(th)
fs
SD
DS(on)
rr
g
gs
gd
iss
oss
rss
oss
oss
oss
JC
JA
eff.
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
J
= 25°C (unless otherwise specified)
J
Junction-to-Case
Junction-to-Ambient
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
Parameter
600
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
5.5
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
1400 –––
1957 –––
–––
–––
–––
–––
–––
–––
–––
530
––– 0.75
––– -100
–––
–––
–––
–––
180
–––
3.0
7.1
13
25
30
22
49
96
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
800
4.0
1.5
4.4
5.5
25
49
13
20
37
µA
nA
µC
nC
ns
pF
ns
W
Typ.
V
V
V
S
Typ.
–––
–––
–––
–––
–––
V
V
V
V
V
V
V
MOSFET symbol
showing the
p-n junction diode.
T
V
V
V
V
I
R
R
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
integral reverse
T
di/dt = 100A/µs „
V
I
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
DS
GS
GS
GS
G
D
= 9.2A
= 25°C, I
= 25°C, I
= 9.2A
= 35.5W,See Fig. 10
= 9.1W
= 600V, V
= 0V, I
= 10V, I
= V
= 480V, V
= 30V
= -30V
= 25V, I
= 400V
= 10V, See Fig. 6 and 13 „
= 300V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
D
DS
D
D
Conditions
DS
DS
= 250µA
Conditions
= 9.2A, V
= 9.2A
Conditions
= 250µA
= 3.3A
GS
GS
= 5.5A
Max.
= 0V to 480V …
Max.
= 1.0V, ƒ = 1.0MHz
= 480V, ƒ = 1.0MHz
290
2.1
9.2
6.0
65
= 0V
= 0V, T
www.irf.com
GS
„
J
G
= 0V
„
= 150°C
Units
Units
S
°C/W
+L
mJ
mJ
A
„
D
D
S
)