IRFIB6N60A Vishay, IRFIB6N60A Datasheet - Page 6

• Manufacturer Part Number: IRFIB6N60A
• Description: MOSFET N-CH 600V 5.5A TO220FP
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of IRFIB6N60A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 3.3A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.75 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5.5 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFIB6N60A

Fig 12a. Unclamped Inductive Test Circuit
6
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Basic Gate Charge Waveform
I
AS
V
G
R G
20V
V DS
Q
GS
t p
I AS
t p
D.U.T
0.01
L
Q
Charge
Q
GD
G
V
(BR)DSS
15V
DRIVER
+
- V DD
A
600
500
400
300
200
100
0
25
Fig 12c. Maximum Avalanche Energy
Fig 13b. Gate Charge Test Circuit
12V
V
GS
Starting T , Junction Temperature ( C)
Same Type as D.U.T.
Current Regulator
.2 F
50
Vs. Drain Current
J
50K
3mA
Current Sampling Resistors
75
.3 F
I
G
100
D.U.T.
www.irf.com
TOP
BOTTOM
I
D
125
+
-
V
DS
°
I D
4.1A
5.8A
9.2A
150