IRFIB6N60A Vishay, IRFIB6N60A Datasheet - Page 7

• Manufacturer Part Number: IRFIB6N60A
• Description: MOSFET N-CH 600V 5.5A TO220FP
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of IRFIB6N60A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 3.3A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.75 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5.5 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFIB6N60A

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Re-Applied
Voltage
Reverse
Recovery
Current

‚
+
-
D.U.T
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
Waveform
Waveform
Ripple
Body Diode
Fig 14. For N-Channel HEXFETS
Period
Body Diode Forward
+
-
ƒ
·
·
·
·
Diode Recovery
5%
Current
dv/dt
Forward Drop
·
·
·
di/dt
D =
-
Period
„
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
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