IRFIB6N60A Vishay, IRFIB6N60A Datasheet - Page 4

• Manufacturer Part Number: IRFIB6N60A
• Description: MOSFET N-CH 600V 5.5A TO220FP
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of IRFIB6N60A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 3.3A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.75 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5.5 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFIB6N60A

4
2400
2000
1600
1200
800
400
100
0.1
10
0
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
C
C
C
iss
oss
V
rss
V
T = 150 C
DS
SD
J
Forward Voltage
V
C
C
C
0.5
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
GS
iss
rss
oss
10
°
= 0V,
= C
= C
= C
gs
ds
gd
+ C
+ C
0.7
gd
gd
f = 1MHz
T = 25 C
J
, C
100
ds
°
1.0
SHORTED
V
GS
= 0 V
1000
1.2
A
1000
100
0.1
10
20
16
12
Fig 8. Maximum Safe Operating Area
1
8
4
0
10
0
T
T
Single Pulse
Fig 6. Typical Gate Charge Vs.
I =
D
C
J
= 25 C
= 150 C
OPERATION IN THIS AREA LIMITED
9.2A
Gate-to-Source Voltage
V
DS
°
10
Q , Total Gate Charge (nC)
°
, Drain-to-Source Voltage (V)
G
100
BY R
20
DS(on)
V
V
V
10us
100us
1ms
10ms
FOR TEST CIRCUIT
DS
DS
DS
30
1000
SEE FIGURE
www.irf.com
= 480V
= 300V
= 120V
40
13
10000
50