BUK9245-55A,118 NXP Semiconductors, BUK9245-55A,118 Datasheet - Page 4

• Manufacturer Part Number: BUK9245-55A,118
• Description: MOSFET N-CH 55V 28A SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9245-55A,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 14nC @ 5V
• Input Capacitance (ciss) @ Vds: 1006pF @ 25V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.04 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 28 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056853118; BUK9245-55A /T3; BUK9245-55A /T3

Philips Semiconductors
7. Thermal characteristics
Table 4:
9397 750 08559
Product data
Symbol
R
R
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
th(j-a)
th(j-mb)
Z th(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
thermal resistance from junction to mounting
base
(K/W)
10 -1
10 -2
10
1
10 -6
0.02
0.05
0.2
0.1
Single Shot
= 0.5
7.1 Transient thermal impedance
10 -5
10 -4
Rev. 01 — 11 October 2001
Conditions
Figure 4
10 -3
10 -2
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
P
10 -1
BUK9245-55A
t p
T
t p (s)
=
Value
71.4
2.1
03nf99
t p
T
t
1
Unit
K/W
K/W
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