PHP20N06T,127 NXP Semiconductors, PHP20N06T,127 Datasheet

PHP20N06T,127

Manufacturer Part Number

PHP20N06T,127

Description

MOSFET N-CH 55V 20.3A SOT78

Manufacturer

NXP Semiconductors

Series

TrenchMOS™r

Datasheet

1.PHP20N06T127.pdf (15 pages)

Specifications of PHP20N06T,127

Package / Case

TO-220AB-3

Mounting Type

Through Hole

Power - Max

62W

Fet Type

MOSFET N-Channel, Metal Oxide

Gate Charge (qg) @ Vgs

11nC @ 10V

Vgs(th) (max) @ Id

4V @ 1mA

Current - Continuous Drain (id) @ 25° C

20.3A

Drain To Source Voltage (vdss)

55V

Fet Feature

Standard

Rds On (max) @ Id, Vgs

75 mOhm @ 10A, 10V

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.075 Ohm @ 10 V

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

20.3 A

Power Dissipation

62000 mW

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

934056614127::PHP20N06T::PHP20N06T

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1. Description

2. Features

3. Applications

4. Pinning information

Table 1:

[1]

It is not possible to make connection to pin 2 of the SOT404 package.

TrenchMOS is a trademark of Royal Philips Electronics.

Description

gate (g)

drain (d)

source (s)

mounting base;

connected to drain (d)

Pinning - SOT78, SOT404, simpliﬁed outline and symbol

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using

TrenchMOS™

Product availability:

PHP20N06T in SOT78 (TO-220AB)

PHB20N06T in SOT404

[1]

PHP20N06T; PHB20N06T

N-channel TrenchMOS™ transistor

Rev. 01 — 22 February 2001

Very low on-state resistance

Fast switching.

Switched mode power supplies

DC to DC converters.

Simpliﬁed outline

SOT78 (TO-220AB)

1 2

technology.

MBK106

-PAK).

SOT404 (D

-PAK)

MBK116

Symbol

Product speciﬁcation

MBB076

Related parts for PHP20N06T,127

PHP20N06T,127 Summary of contents

Page 1

PHP20N06T; PHB20N06T N-channel TrenchMOS™ transistor Rev. 01 — 22 February 2001 1. Description N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™ Product availability: PHP20N06T in SOT78 (TO-220AB) PHB20N06T in SOT404 2. Features Very low on-state resistance Fast ...

Page 2

Philips Semiconductors 5. Quick reference data Table 2: Quick reference data Symbol Parameter V drain-source voltage (DC drain current (DC total power dissipation tot T junction temperature j R drain-source on-state resistance DSon 6. Limiting values ...

Page 3

Philips Semiconductors 120 P der (%) 100 100 P tot P = ---------------------- 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of mounting base ...

Page 4

Philips Semiconductors 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to ambient th(j-a) R thermal resistance from junction to mounting th(j-mb) base 7.1 Transient thermal impedance 10 Z th(j-mb) (K/ ...

Page 5

Philips Semiconductors 8. Characteristics Table 5: Characteristics unless otherwise speciﬁed j Symbol Parameter Static characteristics V drain-source breakdown (BR)DSS voltage V gate-source threshold voltage I GS(th) I drain-source leakage current DSS I gate-source leakage current GSS ...

Page 6

Philips Semiconductors Table 5: Characteristics …continued unless otherwise speciﬁed j Symbol Parameter Source-drain diode V source-drain (diode forward) SD voltage t reverse recovery time rr Q recovered charge ( ...

Page 7

Philips Semiconductors 5 4.5 V GS(th) 4 (V) 3.5 3 2.5 2 1.5 1 0.5 0 - Fig 9. Gate-source threshold voltage as a function of junction ...

Page 8

Philips Semiconductors ( 175 Fig 13. Transfer characteristics: drain current as a ...

Page 9

Philips Semiconductors 9. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB ( DIMENSIONS (mm are the original dimensions UNIT A 1 4.5 1.39 0.9 1.3 mm ...

Page 10

Philips Semiconductors Plastic single-ended surface mounted package (Philips version of D (one lead cropped DIMENSIONS (mm are the original dimensions UNIT c 4.50 1.40 0.85 0.64 mm 4.10 1.27 0.60 0.46 ...

Page 11

Philips Semiconductors 10. Soldering handbook, full pagewidth 8.35 8.15 4.85 7.95 Dimensions in mm. Fig 18. Reﬂow soldering footprint for SOT404. 9397 750 07894 Product speciﬁcation PHP20N06T; PHB20N06T 10.85 10.60 10.50 1.50 7.50 7.40 2.15 2.25 1.50 4.60 0.30 3.00 ...

Page 12

Philips Semiconductors 11. Revision history Table 6: Revision history Rev Date CPCN Description 01 20010222 - Product speciﬁcation; initial version 9397 750 07894 Product speciﬁcation PHP20N06T; PHB20N06T N-channel TrenchMOS™ transistor Rev. 01 — 22 February 2001 © Philips Electronics N.V. ...

Page 13

Philips Semiconductors 12. Data sheet status Datasheet status Product status Deﬁnition Objective speciﬁcation Development This data sheet contains the design target or goal speciﬁcations for product development. Speciﬁcation may change in any manner without notice. Preliminary speciﬁcation Qualiﬁcation This data ...

Page 14

Philips Semiconductors Philips Semiconductors - a worldwide company Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 160 101, Fax. +43 160 101 1210 Belarus: Tel. +375 17 220 0733, Fax. ...

Page 15

Philips Semiconductors Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . ...

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