BUK9222-55A,127 NXP Semiconductors, BUK9222-55A,127 Datasheet - Page 7

• Manufacturer Part Number: BUK9222-55A,127
• Description: MOSFET N-CH 55V 48A DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9222-55A,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 2210pF @ 25V
• Power - Max: 103W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: 934056697127; BUK9222-55A; BUK9222-55A

NXP Semiconductors
BUK9222-55A
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
(A)
V
I
D
GS(th)
(V)
120
100
80
60
40
20
2.5
1.5
0.5
0
2
1
0
-60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
0
0
2
T
j
= 25 °C
60
max
typ
min
4
120
T
V
j
All information provided in this document is subject to legal disclaimers.
= 175 °C
GS
03aa33
T
j
( ° C)
(V)
03nc89
Rev. 02 — 1 February 2011
180
6
Fig 10. Gate-source voltage as a function of gate
Fig 12. Drain-source on-state resistance as a function
R
(mΩ)
DSon
V
(V)
GS
50
40
30
20
10
5
4
3
2
1
0
charge; typical values
of drain current; typical values
0
0
V
GS
(V) =
N-channel TrenchMOS logic level FET
3
3.2
10
50
3.4
V
3.6
BUK9222-55A
DD
3.8
= 14V
4
100
20
© NXP B.V. 2011. All rights reserved.
Q
V
I
DD
G
D
(nC)
(A)
= 44V
03nc87
03nc92
5
150
30
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