BUK9215-55A,118 NXP Semiconductors, BUK9215-55A,118 Datasheet

MOSFET N-CH 55V 55A SOT428

BUK9215-55A,118

Manufacturer Part Number
BUK9215-55A,118
Description
MOSFET N-CH 55V 55A SOT428
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK9215-55A,118

Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13.6 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
55A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
48nC @ 5V
Input Capacitance (ciss) @ Vds
2916pF @ 25V
Power - Max
115W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0136 Ohm @ 10 V
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
62 A
Power Dissipation
115000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934056699118
BUK9215-55A /T3
BUK9215-55A /T3
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
D
DS
tot
DSon
BUK9215-55A
N-channel TrenchMOS logic level FET
Rev. 02 — 7 February 2011
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
12 V and 24 V loads
Automotive and general purpose
power switching
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
Conditions
T
V
see
T
V
T
V
T
V
T
see
j
GS
mb
GS
j
GS
j
GS
j
≥ 25 °C; T
= 25 °C
= 25 °C
= 25 °C; see
Figure
Figure 12
= 25 °C; see
= 5 V; T
= 10 V; I
= 4.5 V; I
= 5 V; I
1; see
D
mb
j
D
≤ 175 °C
D
= 25 A;
= 25 A;
= 25 °C;
= 25 A;
Figure
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
Motors, lamps and solenoids
Figure 2
Figure 3
11;
[1]
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
11
-
13
Max Unit
55
62
115
13.6 mΩ
16.6 mΩ
15
V
A
W
mΩ

Related parts for BUK9215-55A,118

BUK9215-55A,118 Summary of contents

Page 1

... BUK9215-55A N-channel TrenchMOS logic level FET Rev. 02 — 7 February 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... V DS see Figure 9 Simplified outline SOT428 (DPAK) Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 February 2011 BUK9215-55A N-channel TrenchMOS logic level FET Min ≤ sup = 50 Ω °C; unclamped = ...

Page 3

... D sup °C; unclamped GS j(init) 03nf79 120 P der (%) 150 175 200 T (°C) mb Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 February 2011 BUK9215-55A N-channel TrenchMOS logic level FET Min - - -15 [ see Figure 1; - [ see Figure 1 - ≤ 10 µ Figure 2 - -55 -55 [2] ...

Page 4

... Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK9215-55A Product data sheet = DSon δ All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 February 2011 BUK9215-55A N-channel TrenchMOS logic level FET 03nf78 = 10 μ 100 μ 100 (V) DS © NXP B.V. 2011. All rights reserved ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK9215-55A Product data sheet Conditions see Figure 4 −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 February 2011 BUK9215-55A N-channel TrenchMOS logic level FET Min Typ - - - 71.4 03nf77 t p δ ...

Page 6

... ° see Figure /dt = -100 A/µ - All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 February 2011 BUK9215-55A N-channel TrenchMOS logic level FET Min Typ Max = 25 ° -55 ° 2 ...

Page 7

... Product data sheet 03nb61 (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 February 2011 BUK9215-55A N-channel TrenchMOS logic level FET 19 DSon (mΩ Drain-source on-state resistance as a function of gate-source voltage; typical values ( ...

Page 8

... Fig 10. Gate-source threshold voltage as a function of 03nb62 3.6 4.0 4.2 4.6 5.0 80 100 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 February 2011 BUK9215-55A N-channel TrenchMOS logic level FET 2 max typ min 120 junction temperature ...

Page 9

... V (V) DS Fig 14. Reverse diode current; typical value All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 February 2011 BUK9215-55A N-channel TrenchMOS logic level FET 03nb56 = 175 ° ° 0.5 1.0 1.5 V (V) SD © NXP B.V. 2011. All rights reserved. ...

Page 10

... REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 February 2011 BUK9215-55A N-channel TrenchMOS logic level FET min 10.4 2.95 2.285 4.57 0.5 9 ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK9215-55A v.2 20110207 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...

Page 12

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 February 2011 BUK9215-55A N-channel TrenchMOS logic level FET © NXP B.V. 2011. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 February 2011 BUK9215-55A N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 7 February 2011 Document identifier: BUK9215-55A ...

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