PHP45NQ11T,127 NXP Semiconductors, PHP45NQ11T,127 Datasheet
PHP45NQ11T,127
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PHP45NQ11T,127 Summary of contents
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PHP45NQ11T N-channel TrenchMOS standard level FET Rev. 02 — 19 November 2009 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for ...
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... NXP Semiconductors 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain 3. Ordering information Table 3. Ordering information Type number Package Name Description PHP45NQ11T TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead ...
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... NXP Semiconductors 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage DS V drain-gate voltage DGR V gate-source voltage GS I drain current D I peak drain current DM P total power dissipation tot T storage temperature stg ...
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... NXP Semiconductors Limit R ( Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter R thermal resistance from th(j-mb) junction to mounting base R thermal resistance from th(j-a) junction to ambient 10 Z th(j-mb) (K/W) 1 δ = 0.5 ...
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... NXP Semiconductors 6. Characteristics Table 6. Characteristics Symbol Parameter Static characteristics V drain-source (BR)DSS breakdown voltage V gate-source threshold GS(th) voltage I drain leakage current DSS I gate leakage current GSS R drain-source on-state DSon resistance Dynamic characteristics Q total gate charge G(tot) Q gate-source charge GS Q gate-drain charge GD C input capacitance ...
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... NXP Semiconductors 0.5 1 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values − (A) min typ −2 10 −3 10 −4 10 −5 10 − Fig 7. Sub-threshold drain current as a function of gate-source voltage PHP45NQ11T_2 Product data sheet 03am90 ° ( 4.8 4.6 10 4.4 4.2 ...
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... NXP Semiconductors 0.2 4 4.2 4.4 4.6 R DSon (Ω) 0.15 0.1 0. Fig 9. Drain-source on-state resistance as a function of drain current; typical values ° Fig 11. Gate-source voltage as a function of gate charge; typical values PHP45NQ11T_2 Product data sheet 03am91 ° ( 4 -60 I (A) D Fig 10. Normalized drain-source on-state resistance ...
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... NXP Semiconductors Fig 13. Source current as a function of source-drain voltage; typical values PHP45NQ11T_2 Product data sheet ( 175 ° ° 0 Rev. 02 — 19 November 2009 PHP45NQ11T N-channel TrenchMOS standard level FET 03am93 1.5 (V) SD © NXP B.V. 2009. All rights reserved ...
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... NXP Semiconductors 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB DIMENSIONS (mm are the original dimensions) (2) UNIT 4.7 1.40 0.9 1.6 1.3 mm 4.1 1.25 0.6 1.0 1.0 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION ...
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... Document ID Release date PHP45NQ11T_2 20091119 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. PHP45NQ11T_1 20040331 PHP45NQ11T_2 Product data sheet ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors 11. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . .4 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 9 Legal information 9.1 Data sheet status ...