PHP45NQ11T,127 NXP Semiconductors, PHP45NQ11T,127 Datasheet

MOSFET N-CH 105V 47A SOT78

PHP45NQ11T,127

Manufacturer Part Number
PHP45NQ11T,127
Description
MOSFET N-CH 105V 47A SOT78
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of PHP45NQ11T,127

Package / Case
TO-220AB-3
Mounting Type
Through Hole
Power - Max
150W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
60nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
47A
Drain To Source Voltage (vdss)
105V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
25 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.025 Ohm @ 10 V
Drain-source Breakdown Voltage
105 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
47 A
Power Dissipation
150000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934058294127::PHP45NQ11T::PHP45NQ11T
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
Table 1.
Symbol Parameter
V
I
P
Dynamic characteristics
Q
Static characteristics
R
D
DS
tot
GD
DSon
Low conduction losses due to low
on-state resistance
DC-to-DC convertors
PHP45NQ11T
N-channel TrenchMOS standard level FET
Rev. 02 — 19 November 2009
drain-source voltage T
drain current
total power
dissipation
gate-drain charge
drain-source
on-state resistance
Quick reference
Conditions
T
see
T
V
V
see
V
T
see
j
mb
mb
j
GS
DS
GS
≥ 25 °C; T
= 25 °C;
Figure 1
Figure 11
Figure 9
= 25 °C; V
= 25 °C; see
= 80 V; T
= 10 V; I
= 10 V; I
j
D
D
and
and
≤ 175 °C
j
= 25 °C;
GS
= 45 A;
= 25 A;
3
Figure 2
10
= 10 V;
Suitable for high frequency
applications due to fast switching
characteristics
Switched-mode power supplies
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
23.2
19
Max
105
47
150
-
25
Unit
V
A
W
nC
mΩ

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PHP45NQ11T,127 Summary of contents

Page 1

PHP45NQ11T N-channel TrenchMOS standard level FET Rev. 02 — 19 November 2009 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain 3. Ordering information Table 3. Ordering information Type number Package Name Description PHP45NQ11T TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead ...

Page 3

... NXP Semiconductors 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V drain-source voltage DS V drain-gate voltage DGR V gate-source voltage GS I drain current D I peak drain current DM P total power dissipation tot T storage temperature stg ...

Page 4

... NXP Semiconductors Limit R ( Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter R thermal resistance from th(j-mb) junction to mounting base R thermal resistance from th(j-a) junction to ambient 10 Z th(j-mb) (K/W) 1 δ = 0.5 ...

Page 5

... NXP Semiconductors 6. Characteristics Table 6. Characteristics Symbol Parameter Static characteristics V drain-source (BR)DSS breakdown voltage V gate-source threshold GS(th) voltage I drain leakage current DSS I gate leakage current GSS R drain-source on-state DSon resistance Dynamic characteristics Q total gate charge G(tot) Q gate-source charge GS Q gate-drain charge GD C input capacitance ...

Page 6

... NXP Semiconductors 0.5 1 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values − (A) min typ −2 10 −3 10 −4 10 −5 10 − Fig 7. Sub-threshold drain current as a function of gate-source voltage PHP45NQ11T_2 Product data sheet 03am90 ° ( 4.8 4.6 10 4.4 4.2 ...

Page 7

... NXP Semiconductors 0.2 4 4.2 4.4 4.6 R DSon (Ω) 0.15 0.1 0. Fig 9. Drain-source on-state resistance as a function of drain current; typical values ° Fig 11. Gate-source voltage as a function of gate charge; typical values PHP45NQ11T_2 Product data sheet 03am91 ° ( 4 -60 I (A) D Fig 10. Normalized drain-source on-state resistance ...

Page 8

... NXP Semiconductors Fig 13. Source current as a function of source-drain voltage; typical values PHP45NQ11T_2 Product data sheet ( 175 ° ° 0 Rev. 02 — 19 November 2009 PHP45NQ11T N-channel TrenchMOS standard level FET 03am93 1.5 (V) SD © NXP B.V. 2009. All rights reserved ...

Page 9

... NXP Semiconductors 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB DIMENSIONS (mm are the original dimensions) (2) UNIT 4.7 1.40 0.9 1.6 1.3 mm 4.1 1.25 0.6 1.0 1.0 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION ...

Page 10

... Document ID Release date PHP45NQ11T_2 20091119 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. PHP45NQ11T_1 20040331 PHP45NQ11T_2 Product data sheet ...

Page 11

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 12

... NXP Semiconductors 11. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . .4 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . .10 9 Legal information 9.1 Data sheet status ...

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