PHP20NQ20T,127 NXP Semiconductors, PHP20NQ20T,127 Datasheet

MOSFET N-CH 200V 20A SOT78

PHP20NQ20T,127

Manufacturer Part Number
PHP20NQ20T,127
Description
MOSFET N-CH 200V 20A SOT78
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PHP20NQ20T127.pdf (9 pages)

Specifications of PHP20NQ20T,127

Package / Case
TO-220AB-3
Mounting Type
Through Hole
Power - Max
150W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
65nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
20A
Drain To Source Voltage (vdss)
200V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
130 mOhm @ 10A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.13 Ohm @ 10 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
20 A
Power Dissipation
150000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055762127::PHP20NQ20T::PHP20NQ20T
Philips Semiconductors
FEATURES
• ’Trench’ technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device
has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.
The PHP20NQ20T is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB20NQ20T is supplied in the SOT404 (D
PINNING
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
1 It is not possible to make connection to pin:2 of the SOT404 package
August 1999
N-channel TrenchMOS
SYMBOL PARAMETER
V
V
V
I
I
P
T
D
DM
j
DSS
DGR
GS
D
, T
PIN
tab
1
2
3
stg
gate
drain
source
drain
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
1
DESCRIPTION
transistor
SYMBOL
SOT78 (TO220AB)
CONDITIONS
T
T
T
T
T
T
j
j
mb
mb
mb
mb
= 25 ˚C to 175˚C
= 25 ˚C to 175˚C; R
= 25 ˚C; V
= 100 ˚C; V
= 25 ˚C
= 25 ˚C
2
PAK) surface mounting package.
g
tab
1
GS
GS
1 2 3
d
s
= 10 V
= 10 V
GS
= 20 k
PHP20NQ20T, PHB20NQ20T
QUICK REFERENCE DATA
SOT404 (D
R
MIN.
DS(ON)
- 55
V
-
-
-
-
-
-
-
DSS
I
D
Product specification
2
= 20 A
1
PAK)
= 200 V
tab
2
130 m
MAX.
200
200
150
175
20
14
80
3
20
Rev 1.000
UNIT
W
˚C
V
V
V
A
A
A

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PHP20NQ20T,127 Summary of contents

Page 1

Philips Semiconductors N-channel TrenchMOS FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low ...

Page 2

Philips Semiconductors N-channel TrenchMOS AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER E Non-repetitive avalanche AS energy I Non-repetitive avalanche AS current THERMAL RESISTANCES SYMBOL PARAMETER R Thermal resistance junction th ...

Page 3

Philips Semiconductors N-channel TrenchMOS REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T = 25˚C unless otherwise specified j SYMBOL PARAMETER I Continuous source current S (body diode) I Pulsed source current (body SM diode) V Diode forward voltage SD t Reverse ...

Page 4

Philips Semiconductors N-channel TrenchMOS Normalised Power Derating, PD (%) 100 100 Mounting Base temperature, Tmb (C) Fig.1. Normalised power dissipation. PD% = 100 ...

Page 5

Philips Semiconductors N-channel TrenchMOS Drain current, ID (A) 20 VDS > RDS(ON Gate-source voltage, VGS (V) Fig.7. Typical transfer characteristics f(V ) ...

Page 6

Philips Semiconductors N-channel TrenchMOS Gate-source voltage, VGS ( 20A VDD = ...

Page 7

Philips Semiconductors N-channel TrenchMOS MECHANICAL DATA Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220 DIMENSIONS (mm are the original dimensions UNIT A 1 4.5 1.39 0.9 mm 4.1 1.27 0.7 Note 1. Terminals in this zone ...

Page 8

Philips Semiconductors N-channel TrenchMOS MECHANICAL DATA Plastic single-ended surface mounted package (Philips version of D (one lead cropped DIMENSIONS (mm are the original dimensions) UNIT 4.50 1.40 mm 4.10 1.27 OUTLINE VERSION ...

Page 9

Philips Semiconductors N-channel TrenchMOS MOUNTING INSTRUCTIONS Dimensions in mm DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. ...

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