BUK7608-55A,118 NXP Semiconductors, BUK7608-55A,118 Datasheet - Page 4

• Manufacturer Part Number: BUK7608-55A,118
• Description: MOSFET N-CH 55V 75A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7608-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 76nC @ 0V
• Input Capacitance (ciss) @ Vds: 4352pF @ 25V
• Power - Max: 254W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 126 A
• Power Dissipation: 254000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055643118; BUK7608-55A /T3; BUK7608-55A /T3

NXP Semiconductors
BUK7608-55A
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
140
120
100
80
60
40
20
0
25
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Capped at 75 A due to package
50
(A)
I
75
D
10
10
10
1
3
2
1
Capped at 75 A due to package
100
125
R
DSon
150
= V
T
All information provided in this document is subject to legal disclaimers.
mb
DS
175
(°C)
/ I
03nh50
D
200
Rev. 03 — 14 June 2010
DC
10
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
N-channel TrenchMOS standard level FET
V
DS
50
(V)
t
p
100 μs
10 ms
100 ms
1 ms
BUK7608-55A
100
= 10 μs
03nh48
10
2
150
© NXP B.V. 2010. All rights reserved.
T
mb
03na19
(°C)
200
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