IRF7524D1TRPBF International Rectifier, IRF7524D1TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7524D1TRPBF
• Description: MOSFET P-CH 20V 1.7A MICRO8
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7524D1TRPBF

• Package / Case: Micro8™
• Mounting Type: Surface Mount
• Power - Max: 1.25W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 8.2nC @ 4.5V
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Drain To Source Voltage (vdss): 20V
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 270 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 1.7 A
• Power Dissipation: 1.25 W
• Gate Charge Qg: 5.4 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.01
0 . 0 1
0.1
10
0.1
1 0
1
1
0.1
1.5
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
TOP
BOTTOM
-V
2.0
-V
DS
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
-1.50V
G S
, Drain-to-Source Voltage (V)
T = 2 5 °C
2.5
, G a te -to -S o u rc e V o lta g e (V )
J
-1.50V
3.0
T = 1 5 0 °C
1
J
3.5
V
2 0 µ s P U L S E W ID T H
20µs PULSE WIDTH
T = 25 C
J
D S
Power Mosfet Characteristics
= -1 0 V
4.0
°
4.5
10
5.0
A
0.01
0.1
2.0
1.5
1.0
0.5
0.0
10
1
-60
0.1
Fig 4. Normalized On-Resistance
Fig 2. Typical Output Characteristics
TOP
BOTTOM
I
D
-40
= -1.2 A
-V
T , Junction T em perature (°C )
DS
-20
J
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
-1.50V
, Drain-to-Source Voltage (V)
Vs. Temperature
0
2 0
4 0
-1.50V
1
6 0
IRF7524D1
20µs PULSE WIDTH
T = 150 C
J
8 0
1 0 0 1 2 0 1 4 0 1 6 0
V
G S
°
= -4.5 V
3
10
A