IRF7524D1TRPBF International Rectifier, IRF7524D1TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7524D1TRPBF
• Description: MOSFET P-CH 20V 1.7A MICRO8
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7524D1TRPBF

• Package / Case: Micro8™
• Mounting Type: Surface Mount
• Power - Max: 1.25W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 8.2nC @ 4.5V
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Drain To Source Voltage (vdss): 20V
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 270 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 1.7 A
• Power Dissipation: 1.25 W
• Gate Charge Qg: 5.4 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1000
100
0.1
Fig 10. Typical On-Resistance Vs. Drain
10
0.00001
1
1.0
0.8
0.6
0.4
0.2
0.0
0.0
D = 0.50
0.20
0.10
0.05
0.02
0.01
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.5
-I
(THERMAL RESPONSE)
0.0001
D
VGS = -2.5V
SINGLE PULSE
, Drain Current (A)
Current
1.0
VGS = -5.0V
0.001
Power Mosfet Characteristics
1.5
t , Rectangular Pulse Duration (sec)
1
0.01
2.0
0.300
0.250
0.200
0.150
0.100
Fig 11. Typical On-Resistance Vs. Gate
0.1
2
-V
1. Duty factor D = t / t
2. Peak T = P
Notes:
3
GS
, Gate-to-Source Voltage (V)
1
J
4
Voltage
DM
x Z
ID = -1.7A
1
5
thJC
P
2
IRF7524D1
DM
+ T
10
6
C
t
1
t
2
7
5
100
8