IRF7524D1TRPBF International Rectifier, IRF7524D1TRPBF Datasheet - Page 6

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IRF7524D1TRPBF

Manufacturer Part Number
IRF7524D1TRPBF
Description
MOSFET P-CH 20V 1.7A MICRO8
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet

Specifications of IRF7524D1TRPBF

Package / Case
Micro8™
Mounting Type
Surface Mount
Power - Max
1.25W
Fet Type
MOSFET P-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
8.2nC @ 4.5V
Vgs(th) (max) @ Id
700mV @ 250µA
Current - Continuous Drain (id) @ 25° C
1.7A
Drain To Source Voltage (vdss)
20V
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
270 mOhm @ 1.2A, 4.5V
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
270 mOhms
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
- 1.7 A
Power Dissipation
1.25 W
Gate Charge Qg
5.4 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IRF7524D1
6
0.1
1 0
1
0.0
Fig. 12 -Typical Forward Voltage Drop
F orwa rd V oltage D ro p - V
Forward Voltage Drop - V
0.2
Characteristics
0.4
Schottky Diode Characteristics
0.6
T = 1 50°C
T = 1 25°C
T = 2 5°C
J
J
J
F
F M
(V)
0.8
(V )
1.0
1 6 0
1 4 0
1 2 0
1 0 0
8 0
6 0
4 0
2 0
0
Fig.14 - Maximum Allowable Ambient
0 . 0
A v e ra g e F o rw a rd C u rren t - I
Fig. 13 - Typical Values of Reverse
D = 3/4
D = 1/2
D = 1/3
D = 1/4
D = 1/5
J
Current Vs. Reverse Voltage
Temp. Vs. Forward Current
0 . 5
1 . 0
1 . 5
V = 20V
R
Square wave
www.irf.com
r
t h JA
2 . 0
R
= 100°C /W
F(AV )
2 . 5
D C
(A )
3 . 0
A

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