IRF7524D1TRPBF International Rectifier, IRF7524D1TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7524D1TRPBF
• Description: MOSFET P-CH 20V 1.7A MICRO8
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7524D1TRPBF

• Package / Case: Micro8™
• Mounting Type: Surface Mount
• Power - Max: 1.25W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 8.2nC @ 4.5V
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Drain To Source Voltage (vdss): 20V
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 270 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 1.7 A
• Power Dissipation: 1.25 W
• Gate Charge Qg: 5.4 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7524D1
4
0 . 0 1
0.1
1 0
5 0 0
4 0 0
3 0 0
2 0 0
1 0 0
1
0.4
0
Fig 7. Typical Source-Drain Diode
1
T = 15 0°C
J
Fig 5. Typical Capacitance Vs.
C
C
C
-V
iss
oss
rss
-V
S D
D S
0.6
Forward Voltage
, S ourc e-to-D rain V oltage (V )
V
C
C
C
, D rain-to-S ourc e V oltage (V )
Drain-to-Source Voltage
G S
iss
rs s
o ss
= 0V ,
= C
= C
= C
g s
g d
ds
T = 2 5°C
0.8
J
+ C
+ C
1 0
g d
g d
f = 1 M H z
, C
Power Mosfet Characteristics
d s
1.0
S H O R TE D
V
G S
= 0V
1.2
1 0 0
A
A
1 0 0
0.1
1 0
1 0
8
6
4
2
0
1
0
1
T
T
S ing le P u lse
I
V
Fig 8. Maximum Safe Operating Area
D
A
J
D S
= -1 .2 A
Fig 6. Typical Gate Charge Vs.
= 25 °C
= 15 0°C
= -1 6V
O P E R A TIO N IN TH IS A R E A L IM ITE D
-V
D S
Q , Total G ate C harge (nC )
2
G
, D rain-to-S ourc e V oltage (V )
Gate-to-Source Voltage
4
B Y R
1 0
D S (o n)
FO R TE S T CIR C U IT
6
S E E FIG U R E 9
1 0 0 µ s
1 m s
1 0 m s
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8
1 0 0
1 0
A
A