IRF7521D1TRPBF International Rectifier, IRF7521D1TRPBF Datasheet
IRF7521D1TRPBF
Specifications of IRF7521D1TRPBF
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IRF7521D1TRPBF Summary of contents
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... Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, PDA, etc. ...
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... Max. Forward voltage drop FM I Max. Reverse Leakage current RM C Max. Junction Capacitance t dv/dt Max. Voltage Rate of Charge ( HEXFET is the reg. TM for International Rectifier Power MOSFET 25°C (unless otherwise specified) J Min. Typ. Max. Units Conditions 20 ––– ––– V ...
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VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 10 2.0V BOTTOM 1.5V 1 0.1 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 150° 25° ...
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IRF7521D1PbF 500 1MHz iss rss oss ds gd 400 C iss 300 C oss 200 C rss 100 ...
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D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 1.0 0 2.5V GS 0.6 0.4 0.2 0.0 0.0 1.0 2.0 ...
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IRF7521D1PbF Schottky Diode Characteristics 10 1 0.1 0.0 0.2 0.4 0.6 Forward Voltage Drop - V Forward Votage Drop - V Fig. 12 -Typical Forward Voltage Drop Characteristics ...
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Micro8 Package Outline Dimensions are shown in milimeters (inches 0.25 (.010 ...
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IRF7521D1PbF Micro8 Tape & Reel Information Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER. 330.00 (12.992) MAX. NOTES ...