MOSFET N-CH 20V 2.4A MICRO-8

IRF7521D1

Manufacturer Part NumberIRF7521D1
DescriptionMOSFET N-CH 20V 2.4A MICRO-8
ManufacturerInternational Rectifier
SeriesFETKY™
IRF7521D1 datasheet
 


Specifications of IRF7521D1

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureDiode (Isolated)
Rds On (max) @ Id, Vgs135 mOhm @ 1.7A, 4.5VDrain To Source Voltage (vdss)20V
Current - Continuous Drain (id) @ 25° C2.4AVgs(th) (max) @ Id700mV @ 250µA
Gate Charge (qg) @ Vgs8nC @ 4.5VInput Capacitance (ciss) @ Vds260pF @ 15V
Power - Max1.3WMounting TypeSurface Mount
Package / CaseMicro8™Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
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®
Co-packaged HEXFET
and Schottky Diode
N-Channel HEXFET
Low V
Schottky Rectifier
F
Generation 5 Technology
Micro8
TM
Footprint
Description
TM
The FETKY
family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
TM
The new Micro8
package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the Micro8
an ideal device for applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8
application environments such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings (T
Parameter
I
@ T
= 25°C
Continuous Drain Current, V
D
A
I
@ T
= 70°C
D
A
I
Pulsed Drain Current
DM
P
@T
= 25°C
Power Dissipation
D
A
P
@T
= 70°C
D
A
Linear Derating Factor
V
Gate-to-Source Voltage
GS
dv/dt
Peak Diode Recovery dv/dt
T
T
Junction and Storage Temperature Range
J,
STG
Thermal Resistance Ratings
Parameter
R
Junction-to-Ambient
JA
Notes:
Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
I
1.7A, di/dt
66A/µs, V
V
SD
DD
Pulse width
300µs; duty cycle
Surface mounted on FR-4 board, t
www.irf.com
PRELIMINARY
FETKY MOSFET / Schottky Diode
Power MOSFET
1
A
2
A
3
S
4
G
T op V ie w
TM
will allow it to fit easily into extremely thin
= 25°C unless otherwise noted)
A
@ 4.5V
GS
, T
150°C
(BR)DSS
J
2%
10sec.
PD-91646C
IRF7521D1
8
K
V
= 20V
DSS
7
K
R
= 0.135
DS(on)
6
D
5
D
Schottky Vf = 0.39V
TM
Micro8
TM
Maximum
Units
2.4
A
1.9
19
1.3
W
0.8
10
mW/°C
± 12
V
5.0
V/ns
-55 to +150
°C
Maximum
Units
100
°C/W
1
01/29/99

IRF7521D1 Summary of contents

  • Page 1

    ... Surface mounted on FR-4 board, t www.irf.com PRELIMINARY FETKY MOSFET / Schottky Diode Power MOSFET will allow it to fit easily into extremely thin = 25°C unless otherwise noted 4. 150°C (BR)DSS J 2% 10sec. PD-91646C IRF7521D1 20V DSS 0.135 DS(on Schottky Vf = 0.39V TM Micro8 TM Maximum Units 2.4 A 1.9 19 1.3 W ...

  • Page 2

    ... IRF7521D1 MOSFET Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge gs Q Gate-to-Drain ("Miller") Charge ...

  • Page 3

    ... Power Mosfet Characteristics 0.1 1 .5V 20 µ 5° 0. 2.0 1.5 1.0 0 µ 0.0 A 3.0 3.5 4.0 IRF7521D1 VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1. .5V 2 0µ 0° rain-to-S ource V oltage ( Fig 2. Typical Output Characteristics -60 -40 -20 ...

  • Page 4

    ... IRF7521D1 iss oss rss rain-to-S ourc e V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ° ° 0.1 0.4 0.6 0.8 1.0 1 ourc e-to-D rain V oltage ( Fig 7. Typical Source-Drain Diode Forward Voltage 4 Power Mosfet Characteristics . Fig 6. Typical Gate Charge Vs ing lse 0.1 1.4 1 ...

  • Page 5

    ... rain C urrent (A) D Fig 10. Typical On-Resistance Vs. Drain Current www.irf.com Power Mosfet Characteristics 0.001 0.01 0 Rectangular Pulse Duration (sec 5. 4. 0.0 5.0 6.0 7.0 Fig 11. Typical On-Resistance Vs. Gate IRF7521D1 Notes: 1. Duty factor Peak thJC 1.7A D 2.0 4.0 6 Gate-to-Source Voltage ( Voltage ...

  • Page 6

    ... IRF7521D1 Schottky Diode Characteristics 0.1 0.0 0.2 0.4 0.6 Forwa lta Forward Votage Drop - V Fig. 12 -Typical Forward Voltage Drop Characteristics ° ° ° 0.8 1 era ge Forw ard C urrent - I Fig.14 - Maximum Allowable Ambient J R Fig Typical Values of Reverse Current Vs. Reverse Voltage V = 20V ...

  • Page 7

    ... 0.0 8 (.0 03 DIME N S ION . DIME N S ION : INC DIME N S ION INC Part Marking www.irf.com SSIGN UAL 0.10 (.004 IRF7521D1 INC ILLIME MIN .044 0 .91 1. .008 0 .10 0. .014 0 .25 0.36 C .005 .007 0.13 0.18 D .116 .120 2.95 3.05 e .0256 B ASIC ...

  • Page 8

    ... IRF7521D1 TM Micro8 Tape & Reel & & WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel 6172 96590 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel 221 8371 IR TAIWAN:16 Fl ...