STD10PF06T4 STMicroelectronics, STD10PF06T4 Datasheet

MOSFET P-CH 60V 10A DPAK

STD10PF06T4

Manufacturer Part Number
STD10PF06T4
Description
MOSFET P-CH 60V 10A DPAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Type
Power MOSFETr
Datasheet

Specifications of STD10PF06T4

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
200 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
21nC @ 10V
Input Capacitance (ciss) @ Vds
850pF @ 25V
Power - Max
40W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.2 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
5 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
10 A
Power Dissipation
40000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.2Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±20V
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-65C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2456-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD10PF06T4
Manufacturer:
ST
Quantity:
200
Part Number:
STD10PF06T4
Manufacturer:
ST
Quantity:
20 000
Part Number:
STD10PF06T4 @@@@@@@@@@
Manufacturer:
ST
0
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps
reproducibility.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(
Note: P-CHANNEL MOSFET actual polarity of voltages and current
has to be reversed
March 2002
.
STD10PF06
Pulse width limited by safe operating area.
TYPICAL R
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE
APPLICATION ORIENTED
CHARACTERIZATION
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
MOTOR CONTROL
DC-DC & DC-AC CONVERTERS
Symbol
dv/dt
I
V
DM(
V
V
P
T
DGR
I
I
T
GS
stg
DS
TYPE
D
D
tot
j
(1)
therefore
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 0.18
a
V
60 V
DSS
remarkable
Parameter
< 0.20
R
P-CHANNEL 60V - 0.18
DS(on)
C
GS
= 25°C
GS
= 20 k )
manufacturing
= 0)
C
C
10 A
= 25°C
= 100°C
I
D
STripFET™ II POWER MOSFET
INTERNAL SCHEMATIC DIAGRAM
(1) I
SD
10A, di/dt 300A/µs, V
(Suffix “-1”)
TO-251
IPAK
-65 to 175
Value
± 20
0.27
175
60
60
10
40
40
7
6
1
2
- 10A IPAK/DPAK
3
DD
STD10PF06
V
(BR)DSS
(Suffix “T4”)
, T
TO-252
DPAK
j
T
JMAX
1
W/°C
V/ns
Unit
3
°C
°C
W
V
V
V
A
A
A
1/9

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STD10PF06T4 Summary of contents

Page 1

TYPE V DSS STD10PF06 60 V TYPICAL R (on) = 0.18 DS EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE ...

Page 2

STD10PF06 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol Avalanche Current, Repetitive or Not-Repetitive I AR (pulse width limited by T Single Pulse Avalanche Energy E AS ...

Page 3

STD10PF06 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Turn-on Delay Time t d(on) Rise Time Total Gate Charge g Q Gate-Source Charge gs Gate-Drain Charge Q gd SWITCHING OFF Symbol Parameter t Turn-off Delay Time d(off) Fall ...

Page 4

STD10PF06 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/9 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

STD10PF06 Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics . Normalized on Resistance vs Temperature Normalized Breakdown Voltage Temperature . 5/9 ...

Page 6

STD10PF06 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 Fig. 2: Unclamped ...

Page 7

STD10PF06 TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A 2.2 A1 0.9 A3 0.7 B 0. 0. 6.4 G 4 TYP. ...

Page 8

STD10PF06 TO-252 (DPAK) MECHANICAL DATA DIM. MIN. A 2.2 A1 0.9 A2 0.03 B 0.64 B2 5.2 C 0. 6.4 G 4 0.6 L2 8/9 mm TYP. MAX. 2.4 1.1 0.23 ...

Page 9

... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics ...

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