STD12NF06LT4 STMicroelectronics, STD12NF06LT4 Datasheet

MOSFET N-CH 60V 12A DPAK

STD12NF06LT4

Manufacturer Part Number
STD12NF06LT4
Description
MOSFET N-CH 60V 12A DPAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Type
Power MOSFETr
Datasheet

Specifications of STD12NF06LT4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
100 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 5V
Input Capacitance (ciss) @ Vds
350pF @ 25V
Power - Max
30W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
7 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
12 A
Power Dissipation
30000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.1Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±16V
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2487-2

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Order codes
General features
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Applications
February 2007
STD12NF06L-1
STD12NF06L
Exceptional dv/dt capability
Low gate charge
Switching application
STD12NF06LT4
Type
STD12NF06L-1
Part number
V
60V
60V
DSSS
R
<0.1Ω
<0.1Ω
DS(on)
N-channel 60V - 0.08Ω - 12A - DPAK - IPAK
D12NF06L
D12NF06L
Marking
12A
12A
I
D
Rev 6
Internal schematic diagram
STripFET™ II Power MOSFET
Package
DPAK
IPAK
DPAK
1
STD12NF06L-1
3
STD12NF06L
Tape & reel
Packaging
IPAK
Tube
1
www.st.com
2
3
1/14
14

Related parts for STD12NF06LT4

STD12NF06LT4 Summary of contents

Page 1

... Applications ■ Switching application Order codes Part number STD12NF06LT4 STD12NF06L-1 February 2007 N-channel 60V - 0.08Ω - 12A - DPAK - IPAK STripFET™ II Power MOSFET R I DS(on) D <0.1Ω ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STD12NF06L 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I ...

Page 4

Electrical characteristics 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 3. On/off states Symbol Drain-source breakdown V (BR)DSS voltage Zero gate voltage drain I DSS current (V Gate body leakage current I GSS ( ...

Page 5

STD12NF06L Table 6. Source drain diode Symbol I Source-drain current SD I Source-drain current (pulsed) SDM (1) Forward on voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Reverse recovery current I RRM 1. Pulsed: pulse ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characteristics Figure 5. Transconductance 6/14 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance STD12NF06L ...

Page 7

STD12NF06L Figure 7. Gate charge vs. gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs. temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs. temperature 7/14 ...

Page 8

Test circuit 3 Test circuit Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive waveform 8/14 Figure 13. Gate charge test circuit Figure 15. ...

Page 9

STD12NF06L 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the ...

Page 10

Package mechanical data DIM 10/14 TO-251 (IPAK) MECHANICAL DATA mm MIN. TYP. MAX. 2.2 2.4 0.9 1.1 0.7 1.3 0.64 0.9 5.2 5.4 ...

Page 11

STD12NF06L DIM (L1 DPAK MECHANICAL DATA mm. MIN. TYP MAX. 2.2 2.4 0.9 1.1 0.03 0.23 0.64 0.9 5.2 5.4 0.45 ...

Page 12

Packaging mechanical data 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE MECHANICAL DATA mm DIM. MIN. MAX. MIN. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 D 1.5 1.6 0.059 0.063 D1 ...

Page 13

STD12NF06L 6 Revision history Table 7. Revision history Date 09-Sep-2004 08-Aug-2006 19-Feb-2007 Revision 4 Complete document 5 New template, no content change 6 Typo mistake on page 1 Revision history Changes 13/14 ...

Page 14

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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