STD10NF10T4 STMicroelectronics, STD10NF10T4 Datasheet

MOSFET N-CH 100V 13A DPAK

STD10NF10T4

Manufacturer Part Number
STD10NF10T4
Description
MOSFET N-CH 100V 13A DPAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Type
Power MOSFETr
Datasheet

Specifications of STD10NF10T4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
130 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
21nC @ 10V
Input Capacitance (ciss) @ Vds
460pF @ 25V
Power - Max
50W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.13 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
20 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
13 A
Power Dissipation
50000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
13A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
130mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.13Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
TO-252
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3153-2

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Order codes
General features
Description
This MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC
converters for Telecom and Computer
applications. It is also intended for any
applications with low gate drive requirements.
Applications
August 2006
STD10NF10-1
Exceptional dv/dt capability
Application oriented characterization
Switching application
STD10NF10
Type
STD10NF10T4
STD10NF10-1
Part number
V
100V
100V
DSSS
Low gate charge STripFET™ II Power MOSFET
R
<0.13Ω
<0.13Ω
DS(on)
N-channel 100V - 0.115Ω - 13A - DPAK - IPAK
D10NF10
D10NF10
Marking
13A
13A
I
D
Rev 3
Internal schematic diagram
Package
DPAK
IPAK
DPAK
1
3
STD10NF10-1
STD10NF10
Tape & reel
Packaging
IPAK
Tube
1
www.st.com
2
3
1/14
14

Related parts for STD10NF10T4

STD10NF10T4 Summary of contents

Page 1

... Telecom and Computer applications also intended for any applications with low gate drive requirements. Applications ■ Switching application Order codes Part number STD10NF10T4 STD10NF10-1 August 2006 N-channel 100V - 0.115Ω - 13A - DPAK - IPAK Low gate charge STripFET™ II Power MOSFET R I DS(on) D < ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STD10NF10 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I ...

Page 4

Electrical characteristics 2 Electrical characteristics (T = 25°C unless otherwise specified) CASE Table 3. On /off states Symbol Drain-source breakdown V (BR)DSS voltage Zero gate voltage drain I DSS current (V Gate body leakage current I GSS ( ...

Page 5

STD10NF10 Table 6. Source drain diode Symbol I Source-drain current SD (1) Source-drain current (pulsed) I SDM (2) Forward on voltage Reverse recovery time rr Q Reverse recovery charge rr Reverse recovery current I RRM 1. Pulse ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Transconductance 6/14 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance STD10NF10 ...

Page 7

STD10NF10 Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized breakdown voltage ...

Page 8

Test circuit 3 Test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive waveform 8/14 Figure 14. Gate charge test circuit Figure 16. ...

Page 9

STD10NF10 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on ...

Page 10

Package mechanical data DIM 10/14 TO-251 (IPAK) MECHANICAL DATA mm MIN. TYP. MAX. 2.2 2.4 0.9 1.1 0.7 1.3 0.64 0.9 5.2 5.4 ...

Page 11

STD10NF10 DIM (L1 DPAK MECHANICAL DATA mm. MIN. TYP MAX. 2.2 2.4 0.9 1.1 0.03 0.23 0.64 0.9 5.2 5.4 0.45 ...

Page 12

Packaging mechanical data 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE MECHANICAL DATA mm DIM. MIN. MAX. MIN. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 12.1 D 1.5 1.6 0.059 0.063 D1 ...

Page 13

STD10NF10 6 Revision history Table 7. Revision history Date 09-Sep-2004 07-Aug-2006 Revision 3 Complete version 3 New template, updated SOA Revision history Changes 13/14 ...

Page 14

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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