STD20NF06T4 STMicroelectronics, STD20NF06T4 Datasheet

MOSFET N-CH 60V 24A DPAK

STD20NF06T4

Manufacturer Part Number
STD20NF06T4
Description
MOSFET N-CH 60V 24A DPAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Type
Power MOSFETr
Datasheets

Specifications of STD20NF06T4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
40 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
31nC @ 10V
Input Capacitance (ciss) @ Vds
690pF @ 25V
Power - Max
60W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
24A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
32mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.032 Ohms
Forward Transconductance Gfs (max / Min)
15 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
24 A
Power Dissipation
60 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.04Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±20V
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-6561-2
STD20NF06T4

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD20NF06T4
Manufacturer:
ST MICROELECTRONICS
Quantity:
30 000
Part Number:
STD20NF06T4
Manufacturer:
ST
0
Part Number:
STD20NF06T4
Manufacturer:
ST
Quantity:
200
Part Number:
STD20NF06T4
Manufacturer:
ST
Quantity:
20 000
Order code
General features
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Applications
February 2007
STD20NF06
Exceptional dv/dt capability
Application oriented characterization
100% avalanche tested
Switching application
Type
STD20NF06T4
Part number
V
60V
DSS
<0.040Ω
R
DS(on)
D20NF06
Marking
24A
I
N-channel 60V - 0.032Ω - 24A - DPAK
D
Rev 5
Internal schematic diagram
STripFET™ II Power MOSFET
Package
DPAK
DPAK
STD20NF06
1
3
Tape & reel
Packaging
www.st.com
1/13
13

Related parts for STD20NF06T4

STD20NF06T4 Summary of contents

Page 1

... Applications ■ Switching application Order code Part number STD20NF06T4 February 2007 N-channel 60V - 0.032Ω - 24A - DPAK STripFET™ II Power MOSFET R I DS(on) D <0.040Ω 24A ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STD20NF06 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate- source voltage GS I Drain current (continuous Drain current (continuous (1) ...

Page 4

Electrical characteristics 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 3. On/off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate threshold voltage GS(th) ...

Page 5

STD20NF06 Table 5. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characteristics Figure 5. Transconductance 6/13 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance STD20NF06 ...

Page 7

STD20NF06 Figure 7. Gate charge vs. gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs. temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs. temperature Figure 12. Normalized breakdown voltage ...

Page 8

Test circuit 3 Test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive waveform 8/13 Figure 14. Gate charge test circuit Figure 16. ...

Page 9

STD20NF06 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the ...

Page 10

Package mechanical data DIM (L1 10/13 DPAK MECHANICAL DATA mm. MIN. TYP MAX. 2.2 2.4 0.9 1.1 0.03 0.23 0.64 0.9 ...

Page 11

STD20NF06 5 Packing mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE MECHANICAL DATA mm DIM. MIN. A0 6 1.5 D1 1.5 E 1.65 F 7.4 K0 2.55 P0 3.9 P1 7.9 P2 1.9 R ...

Page 12

Revision history 6 Revision history Table 6. Revision history Date 22-Jun-2004 16-Jul-2004 09-Sep-2004 03-Jul-2006 20-Feb-2007 12/13 Revision 1 First release 2 Change status from preliminary to definitive datasheet 3 Typing error 4 New template, no content change 5 Typo mistake ...

Page 13

... STD20NF06 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

Related keywords