STD5N20LT4 STMicroelectronics, STD5N20LT4 Datasheet - Page 4

• Manufacturer Part Number: STD5N20LT4
• Description: MOSFET N-CH 200V 5A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD5N20LT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 700 mOhm @ 2.5A, 5V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2.5V @ 50µA
• Gate Charge (qg) @ Vgs: 6nC @ 5V
• Input Capacitance (ciss) @ Vds: 242pF @ 25V
• Power - Max: 33W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.7 Ohm @ 5 V
• Forward Transconductance Gfs (max / Min): 6.5 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5 A
• Power Dissipation: 33000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 650mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4335-2

STD5N20L
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Figure 3: Safe Operating Area
Figure 4: Output Characteristics
Figure 5: Transconductance
Figure 6: Thermal Impedance
Figure 7: Transfer Characteristics
Figure 8: Static Drain-source On Resistance