STP16NF06FP STMicroelectronics, STP16NF06FP Datasheet - Page 9

• Manufacturer Part Number: STP16NF06FP
• Description: MOSFET N-CH 60V 11A TO-220FP
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP16NF06FP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 315pF @ 25V
• Power - Max: 25W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 80mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.1 Ohms
• Forward Transconductance Gfs (max / Min): 6.5 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Power Dissipation: 25 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STP16NF06 - STP16NF06FP
3
Figure 15. Switching times test circuit for
Figure 17. Test circuit for inductive load
Figure 19. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuit
Figure 16. Gate charge test circuit
Figure 18. Unclamped Inductive load test
Figure 20. Switching time waveform
circuit
Test circuit
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