STD4NK60ZT4 STMicroelectronics, STD4NK60ZT4 Datasheet - Page 2

• Manufacturer Part Number: STD4NK60ZT4
• Description: MOSFET N-CH 600V 4A DPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD4NK60ZT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 510pF @ 25V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 3 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 4 A
• Power Dissipation: 70000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 4A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 2ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5889-2; Q2161615; STD4NK60ZT4

STP4NK60Z,STP4NK60ZFP,STB4NK60Z,STB4NK60Z-1,STD4NK60Z,STD4NK60Z-1
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(1) I
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/16
V
Rthj-case
Rthj-amb
Symbol
Symbol
Symbol
dv/dt (1)
SD
BV
ESD(G-S)
I
V
DM
P
V
V
V
E
T
I
DGR
TOT
I
I
AR
ISO
T
T
stg
DS
GS
AS
GSO
D
D
4A, di/dt 200A/µs, V
j
l
( )
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Gate-Source Breakdown
Voltage
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Operating Junction Temperature
Storage Temperature
Parameter
DD
j
= 25 °C, I
V
(BR)DSS
Parameter
D
C
GS
, T
= I
= 25°C
GS
j
j
= 20 k )
max)
AR
Parameter
T
= 0)
, V
JMAX.
DD
C
C
Igs=± 1mA (Open Drain)
= 25°C
= 100°C
= 50 V)
Test Conditions
STB4NK60Z-1
STP4NK60Z
STB4NK60Z
0.56
2.5
16
70
4
-
TO-220
D
I
2
1.78
2
PAK
PAK
STP4NK60ZFP
-55 to 150
-55 to 150
62.5
Value
Min.
2.5 (*)
3000
± 30
16 (*)
2500
600
600
30
4 (*)
4.5
0.2
25
TO-220FP
300
Max Value
5
120
Typ.
4
STD4NK60Z-1
STD4NK60Z
0.56
DPAK
2.5
16
70
IPAK
1.78
4
100
-
Max.
°C/W
°C/W
W/°C
Unit
Unit
Unit
V/ns
mJ
°C
°C
°C
A
V
W
V
V
V
A
A
A
V
V