STD4NK60ZT4 STMicroelectronics, STD4NK60ZT4 Datasheet - Page 5
STD4NK60ZT4
Manufacturer Part Number
STD4NK60ZT4
Description
MOSFET N-CH 600V 4A DPAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Specifications of STD4NK60ZT4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 2A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
26nC @ 10V
Input Capacitance (ciss) @ Vds
510pF @ 25V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
3 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
4 A
Power Dissipation
70000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
4A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
2ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5889-2
Q2161615
STD4NK60ZT4
Q2161615
STD4NK60ZT4
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STD4NK60ZT4
Manufacturer:
TI
Quantity:
15 600
Part Number:
STD4NK60ZT4
Manufacturer:
ST
Quantity:
20 000
STB4NK60Zx, STD4NK60Zx, STP4NK60Z, STP4NK60ZFP
Table 7.
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2. Pulse width limited by safe operating area
Table 8.
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
Symbol
BV
I
Symbol
V
SDM
I
RRM
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
I
SD
Q
GSO
SD
t
rr
rr
(2)
(1)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown voltage Igs=± 1 mA (open drain)
Source drain diode
Gate-source Zener diode
Parameter
Parameter
I
I
V
(see
SD
SD
DD
= 4 A, V
= 4 A, di/dt = 100 A/µs
Test conditions
= 24 V, Tj = 150 °C
Figure
Test conditions
GS
19)
= 0
Electrical characteristics
Min.
Min.
30
1700
Typ.
400
8.5
Typ.
Max.
Max.
1.6
16
4
Unit
Unit
nC
ns
A
A
V
A
V
5/20