STD4NK50ZD-1 STMicroelectronics, STD4NK50ZD-1 Datasheet - Page 4

• Manufacturer Part Number: STD4NK50ZD-1
• Description: MOSFET N-CH 500V 3A IPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD4NK50ZD-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.7 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 310pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 2.7ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5964-5

Electrical characteristics
2
4/17
Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
Table 6.
C
V
Symbol
Symbol
Symbol
R
CASE
V
oss eq
(BR)DSS
g
t
t
C
I
I
inceases from 0 to 80% V
DS(on)
C
C
Q
Q
d(on)
d(off)
GS(th)
DSS
GSS
fs
Q
oss
oss eq.
t
t
rss
iss
gs
gd
r
f
(1)
g
=25°C unless otherwise specified)
(2)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
DS
= 0)
Parameter
Parameter
Parameter
GS
= 0)
DSS
STD4NK50ZD - STD4NK50ZD-1 - STF4NK50ZD - STP4NK50ZD
V
V
V
V
V
V
(see Figure 11)
V
R
(see Figure 18)
I
V
V
V
V
V
D
DS
DS
GS
GS
DD
GS
DD
G
DS
DS
GS
DS
GS
= 1mA, V
= 4.7Ω, V
= 0
= 0, V
= 400V, I
= V
= 10V, I
=15V, I
= 25V, f = 1 MHz,
= 250 V, I
Test condictions
=10V
= Max rating,
= Max rating @125°C
= ±20V
Test condictions
Test condictions
GS
DS
, I
D
D
GS
D
=0V to 400V
D
GS
= 1.5A
= 1.5A
= 50µA
D
= 0
= 3A
= 1.5A,
=10V
Min.
500
2.5
Min.
Min.
Typ.
Typ.
3.5
2.3
Typ.
15.5
310
1.5
9.5
49
10
33
12
23
22
3
7
oss
Max.
Max.
Max.
±
4.5
2.7
when V
50
10
1
DS
Unit
Unit
Unit
µA
µA
µA
nC
nC
nC
pF
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S