IRF7470PBF International Rectifier, IRF7470PBF Datasheet

MOSFET N-CH 40V 10A 8-SOIC

IRF7470PBF

Manufacturer Part Number
IRF7470PBF
Description
MOSFET N-CH 40V 10A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheet

Specifications of IRF7470PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
44nC @ 4.5V
Input Capacitance (ciss) @ Vds
3430pF @ 20V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.013Ohm
Drain-source On-volt
40V
Gate-source Voltage (max)
±12V
Drain Current (max)
10A
Power Dissipation
2.5W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
15 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
11 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
3.2 ns
Gate Charge Qg
29 nC
Minimum Operating Temperature
- 55 C
Rise Time
1.9 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7470PBF
Manufacturer:
AVAGO
Quantity:
3 582
l
l
Benefits
Absolute Maximum Ratings
Thermal Resistance
Notes  through „ are on page 8
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l
www.irf.com
Applications
Symbol
V
V
I
I
I
P
P
T
Symbol
R
R
D
D
DM
DS
GS
D
D
J
θJL
θJA
@ T
@ T
, T
and Current
High Frequency DC-DC Converters
Lead-Free
@T
@T
with Synchronous Rectification
Ultra-Low Gate Impedance
Very Low R
Fully Characterized Avalanche Voltage
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
DS(on)
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Junction and Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient „
Linear Derating Factor
at 4.5V V
Parameter
Parameter
GS

SMPS MOSFET
GS
GS
ƒ
ƒ
@ 10V
@ 10V
G
S
S
S
V
40V
1
2
3
4
DSS
Top View
Typ.
–––
–––
HEXFET
8
7
6
5
-55 to + 150
R
± 12
D
D
D
D
Max.
DS(on)
A
A
0.02
8.5
2.5
1.6
40
10
85
13mΩ
IRF7470PbF
®
Power MOSFET
Max.
max
20
50
SO-8
W/°C
Units
Units
°C/W
10A
V
°C
W
W
I
V
A
D
1

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IRF7470PBF Summary of contents

Page 1

... Notes  through „ are on page 8 www.irf.com SMPS MOSFET V DSS 40V Top View @ 10V GS @ 10V GS  ƒ ƒ Typ. ––– ––– IRF7470PbF ® HEXFET Power MOSFET R max I DS(on) D 13mΩ 10A SO-8 Max. Units 40 V ± 12 ...

Page 2

... IRF7470PbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...

Page 3

... TOP BOTTOM 10 ° 1 0.1 100 Fig 2. Typical Output Characteristics 2 2.0 1.5 1.0 0.5 = 25V 0.0 2.8 3.0 -60 -40 -20 Fig 4. Normalized On-Resistance IRF7470PbF VGS 15V 10V 4.5V 3.0V 2.7V 2.5V 2.25V 2.0V 2.0V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) DS 10A ...

Page 4

... IRF7470PbF 100000 0V MHZ C iss = rss = oss = 10000 Ciss 1000 Coss 100 Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 ° 150 ° 0.1 0.2 0.6 1.0 1.4 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage 8.0A D SHORTED 100 Total Gate Charge (nC) Fig 6 ...

Page 5

... Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 100 125 150 ° 10 Fig 10b. Switching Time Waveforms 0.001 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7470PbF + - ≤ 1 ≤ 0 d(on) r d(off Notes: 1. Duty factor ...

Page 6

... IRF7470PbF 0.030 0.025 0.020 2.7V 0.015 4.5V 0.010 Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U. 50KΩ .2µF 12V .3µ D.U. 3mA Current Sampling Resistors Fig 13a&b. Basic Gate Charge Test Circuit and Waveform V (BR)DSS 20V Fig 14a&b. Unclamped Inductive Test circuit ...

Page 7

... L 7 6.46 [.255] 3X 1.27 [.050] DAT E CODE (YWW DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL LAS T DIGIT YEAR WW = WEEK XXXX EMBLY CODE F7101 LOT CODE PART NUMBER IRF7470PbF INCHE S MILLIMETERS DIM MIN MAX MIN MAX A .0532 .0688 1.35 1.75 A1 .0040 .0098 ...

Page 8

... IRF7470PbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ...

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