STP5NK65ZFP STMicroelectronics, STP5NK65ZFP Datasheet

MOSFET N-CH 650V 5A TO-220FP

STP5NK65ZFP

Manufacturer Part Number
STP5NK65ZFP
Description
MOSFET N-CH 650V 5A TO-220FP
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STP5NK65ZFP

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.8 Ohm @ 2.1A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
35nC @ 10V
Input Capacitance (ciss) @ Vds
680pF @ 25V
Power - Max
25W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.8 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
4.5 A
Power Dissipation
25 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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Manufacturer
Quantity
Price
Part Number:
STP5NK65ZFP
Manufacturer:
ST
Quantity:
12 500
Part Number:
STP5NK65ZFP
Manufacturer:
ST
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Features
Applications
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage Power MOSFETs including revolutionary
MDmesh™ products
Table 1.
April 2009
STP5NK65ZFP
100% avalanche tested
Extremely high dv/dt capability
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
Improved ESD capability
Switching application
Type
STP5NK65ZFP
Order codes
Device summary
650 V
V
DSS
R
< 1.8 Ω
DS(on)
max
Zener-protected SuperMESH™ Power MOSFET
P5NK65ZFP
Marking
4.5 A
I
D
N-channel 650 V, 1.5 Ω, 4.5 A TO-220FP
Doc ID 15565 Rev 1
25 W
Pw
Figure 1.
TO-220FP
Package
Internal schematic diagram
STP5NK65ZFP
TO-220FP
1
Packaging
2
3
Tube
www.st.com
1/12
12

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STP5NK65ZFP Summary of contents

Page 1

... Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products Table 1. Device summary Order codes STP5NK65ZFP April 2009 N-channel 650 V, 1.5 Ω, 4.5 A TO-220FP 4 Figure 1. Marking Package P5NK65ZFP TO-220FP Doc ID 15565 Rev 1 STP5NK65ZFP TO-220FP Internal schematic diagram Packaging Tube www.st.com 1/12 12 ...

Page 2

... T Single pulse avalanche energy E AS (starting T 2/12 Parameter = ° 100 ° °C C =25 °C) C (BR)DSS. Parameter Parameter max ° Doc ID 15565 Rev 1 STP5NK65ZFP Value Unit 650 V ± (1) 4.5 A (1) 3 0.6 W/°C 2000 V 4.5 V/ns 2500 V -55 to 150 V Value Unit ...

Page 3

... STP5NK65ZFP 2 Electrical characteristics (Tcase =25 °C unless otherwise specified) Table 5. On/off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate threshold voltage GS(th) Static drain-source on R DS(on) resistance Table 6. Dynamic Symbol (1) g Forward transconductance V ...

Page 4

... These integrated Zener diodes thus avoid the usage of external components. 4/12 Parameter Test conditions di/dt = 100 A/µ 100 Figure 20 Parameter Test conditions Igs=± 1mA (open drain) Doc ID 15565 Rev 1 STP5NK65ZFP Min. Typ 375 - 1.76 = 150 ° Min. Typ Max ...

Page 5

... STP5NK65ZFP 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Tj=150°C 0.1 Tc=25°C Sinlge pulse 0.01 10 0.1 1 Figure 4. Output characteristics Figure 6. Transconductance Figure 3. AM03326v1 1µs 10µs 100µs 1ms 10ms V (V) 100 DS Figure 5. Figure 7. Doc ID 15565 Rev 1 Electrical characteristics ...

Page 6

... Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Figure 12. Source-drain diode forward characteristics 6/12 Capacitance variations Figure 11. Normalized on resistance vs temperature Figure 13. Avalanche energy vs starting (mJ) 170 150 130 110 Doc ID 15565 Rev 1 STP5NK65ZFP AM03327v1 120 140 60 80 100 T (°C) J ...

Page 7

... STP5NK65ZFP Figure 14. Normalized BV DSS vs temperature Doc ID 15565 Rev 1 Electrical characteristics 7/12 ...

Page 8

... AM01468v1 Figure 18. Unclamped inductive load test 3.3 1000 µF µ AM01470v1 Figure 20. Switching time waveform V (BR)DSS 10% 0 AM01472v1 Doc ID 15565 Rev 1 STP5NK65ZFP 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 µF 2.7kΩ 47kΩ 1kΩ circuit 2200 3.3 µ ...

Page 9

... STP5NK65ZFP 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Doc ID 15565 Rev 1 Package mechanical data ® 9/12 ...

Page 10

... Package mechanical data Dim 10/12 TO-220FP mechanical data Dia Doc ID 15565 Rev 1 STP5NK65ZFP 7012510_Rev_J ...

Page 11

... STP5NK65ZFP 5 Revision history Table 10. Document revision history Date 16-Apr-2009 Revision 1 First issue Doc ID 15565 Rev 1 Revision history Changes 11/12 ...

Page 12

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 15565 Rev 1 STP5NK65ZFP ...

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