STD2NK90ZT4 STMicroelectronics, STD2NK90ZT4 Datasheet

MOSFET N-CH 900V 2.1A DPAK

STD2NK90ZT4

Manufacturer Part Number
STD2NK90ZT4
Description
MOSFET N-CH 900V 2.1A DPAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STP2NK90Z.pdf (18 pages)

Specifications of STD2NK90ZT4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6.5 Ohm @ 1.05A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
2.1A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
485pF @ 25V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
6.5 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
2.3 S
Drain-source Breakdown Voltage
900 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2.1 A
Power Dissipation
70000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4332-2

Available stocks

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Part Number:
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Order codes
General features
■
■
■
■
■
■
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
stripbased PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Applications
■
July 2006
STD2NK90Z-1
STD2NK90Z
STP2NK90Z
Extremely high dv/dt capability
Improved esd capability
100% avalanche rated
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatibility
Switching application
Type
STD2NK90ZT4
STD2NK90Z-1
Part number
STP2NK90Z
(@Tjmax)
900V
900V
900V
V
DSS
R
N-channel 900V - 5Ω - 2.1A - TO-220 /DPAK/IPAK
<6.5Ω
<6.5Ω
<6.5Ω
DS(on)
2.1A
2.1A
2.1A
I
D2NK90Z
D2NK90Z
P2NK90Z
D
Marking
Zener-Protected SuperMESH™ MOSFET
70W
70W
70W
P
W
Rev 4
STP2NK90Z - STD2NK90Z
Internal schematic diagram
Package
TO-220
TO-220
DPAK
IPAK
1
2
3
STD2NK90Z-1
IPAK
1
2
3
Tape & reel
Packaging
DPAK
Tube
Tube
1
www.st.com
3
1/18
18

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STD2NK90ZT4 Summary of contents

Page 1

... Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Applications ■ Switching application Order codes Part number STD2NK90ZT4 STD2NK90Z-1 STP2NK90Z July 2006 STP2NK90Z - STD2NK90Z Zener-Protected SuperMESH™ MOSFET ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STP2NK90Z - STD2NK90Z - STD2NK90Z-1 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate- source Voltage GS I Drain current (continuous Drain current (continuous) ...

Page 4

Electrical ratings Table 4. Gate-source zener diode Symbol BV Gate-source breakdown voltage GSO 1.1 Protection features of gate-to-source zener diodes The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to ...

Page 5

STP2NK90Z - STD2NK90Z - STD2NK90Z-1 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 5. On/off states Symbol Drain-source breakdown V (BR)DSS Voltage Zero gate voltage I DSS Drain current (V Gate-body Leakage I GSS current (V V Gate ...

Page 6

Electrical characteristics Table 8. Source drain diode Symbol I Source-drain current SD (1) Source-drain current (pulsed) I SDM (2) Forward on voltage Reverse recovery time rr Q Reverse recovery charge rr Reverse recovery current I RRM t ...

Page 7

STP2NK90Z - STD2NK90Z - STD2NK90Z-1 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220/ DPAK/ D²PAK Figure 3. Safe operating area for TO-220FP Figure 5. Output characterisics Electrical characteristics Figure 2. Thermal impedance for TO-220/ DPAK/ D²PAK Figure ...

Page 8

Electrical characteristics Figure 7. Transconductance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature 8/18 STP2NK90Z - STD2NK90Z - STD2NK90Z-1 Figure 8. Static drain-source on resistance Figure 12. Normalized on ...

Page 9

STP2NK90Z - STD2NK90Z - STD2NK90Z-1 Figure 13. Source-drain diode forward characteristics Figure 15. Maximum avalanche energy vs temperature Electrical characteristics Figure 14. Normalized B VDSS vs temperature 9/18 ...

Page 10

Test circuit 3 Test circuit Figure 16. Switching times test circuit for resistive load Figure 18. Test circuit for inductive load switching and diode recovery times Figure 20. Test circuit for inductive load switching and diode recovery times 10/18 STP2NK90Z ...

Page 11

STP2NK90Z - STD2NK90Z - STD2NK90Z-1 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on ...

Page 12

Package mechanical data DIM L20 L30 øP Q 12/18 STP2NK90Z - STD2NK90Z - STD2NK90Z-1 TO-220 MECHANICAL DATA mm. MIN. TYP MAX. 4.40 4.60 0.61 0.88 1.15 1.70 ...

Page 13

STP2NK90Z - STD2NK90Z - STD2NK90Z-1 DIM TO-251 (IPAK) MECHANICAL DATA mm MIN. TYP. MAX. 2.2 2.4 0.9 1.1 0.7 1.3 0.64 0.9 5.2 ...

Page 14

Package mechanical data DIM (L1 14/18 STP2NK90Z - STD2NK90Z - STD2NK90Z-1 DPAK MECHANICAL DATA mm. MIN. TYP MAX. 2.2 2.4 0.9 ...

Page 15

STP2NK90Z - STD2NK90Z - STD2NK90Z-1 5 Packing mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. MAX. A0 10.5 10.7 B0 15.7 15.9 D 1.5 1.6 D1 1.59 1.61 E 1.65 1.85 F 11.4 11.6 K0 4.8 ...

Page 16

Packing mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE MECHANICAL DATA mm DIM. MIN. MAX 10.4 10.6 B1 12.1 D 1.5 1.6 D1 1.5 E 1.65 1.85 F 7.4 7.6 K0 2.55 2.75 P0 ...

Page 17

STP2NK90Z - STD2NK90Z - STD2NK90Z-1 6 Revision history Table 9. Revision history Date 06-Oct-2004 08-Sep-2005 05-Mar-2006 27-Jul-2006 Revision 1 First version 2 Complete version 3 Inserted Ecopack indication 4 New template, no content change Revision history Changes 17/18 ...

Page 18

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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